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BAV99S,135

NXP Semiconductors

BAV99S,135 by NXP Semiconductors

NXP Semiconductors' BAV99S,135 diode features 2 banks, series connected, center tap, 2 elements. With a max reverse recovery time of 0.004 us and max forward voltage of 0.715 V, it is ideal for rectification applications. This small outline diode has a rectangular package and can operate in temperatures ranging from -65 to 150 °C.

Median Price

$0.087

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1k+

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Mouser Electronics

USA . 75,634 parts In-Stock

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$0.280

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$0.108

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$0.063

10k+ parts

$0.049

75,634

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$0.049

DigiKey

USA . 6,583 parts In-Stock

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$0.280

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$0.108

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$0.070

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$0.049

6,583

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$0.070

$0.049

Future Electronics

Canada . 1,220,000 parts In-Stock

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$0.030

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$0.030

Rochester

USA . 696,725 parts In-Stock

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$0.090

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$0.075

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$0.067

696,725

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$0.067

Verical

USA . 357,000 parts In-Stock

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$0.084

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EBV Elektronik

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Avnet

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$0.067

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Arrow

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Digiode

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NAC Semi

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Chip Stock

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Contempo Components LLC

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Next Level Components, LLC

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Speed Components Ltd

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Aztec Data Supply Inc.

USA . 964 parts In-Stock

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964

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Ampacity Inc.

Singapore . 135,015 parts In-Stock

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Argo Parts USA

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Modulus Dynamics

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USA . 150 parts In-Stock

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$53.627

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$53.627

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$53.627

150

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$53.627

$53.627

$53.627

Overview

Discover the BAV99S,135 by NXP Semiconductors, a high-quality diode & rectifier component offering reliability and performance. With advanced technology and expertise in manufacturing, NXP delivers a product with a wide range of applications. From consumer electronics to industrial machinery, this diode provides efficient power management and protection. Experience the value of superior quality, extended lifespan, and enhanced functionality with the BAV99S,135. Upgrade your devices with NXP Semiconductors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making the product long-lasting and reliable.

Config: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Allows for efficient power distribution and utilization across the diodes, enhancing performance.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving time and effort.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching and efficient operation, ideal for high-speed applications.

Maximum Reverse Current: 0.5 uA

Low reverse current minimizes power loss and improves overall efficiency.

Package Shape: RECTANGULAR

Optimal design for compact and space-saving installations.

Reverse Test Voltage: 80 V

Sufficient reverse test voltage for reliable performance in various applications.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit design and integration.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space and allows for high-density mounting.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures stable performance in different environmental conditions.

Minimum Operating Temperature: -65 °C

Capable of functioning in extreme low-temperature environments without any issues.

Terminal Finish: TIN

Tin terminal finish offers good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for easy connection and installation in various setups.

Maximum Power Dissipation: 0.25 W

Efficient power dissipation capability ensures reliable operation under high load conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for a specified duration, ensuring robust solder joints.

Peak Reflow Temperature °C: 260

Suitable for high-temperature reflow soldering processes, facilitating quick and reliable assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.715 V

Low forward voltage drop minimizes power loss and heat generation for efficient operation.

Maximum Output Current: 0.2 A

Capable of handling moderate output currents for various electronic applications.

Terminal Form: GULL WING

Gull wing terminal form offers easy surface-mounting and secure solder connections.

No. of Elements: 4

Multiple elements provide redundancy and increased current handling capacity.

Maximum Repetitive Peak Reverse Voltage: 100 V

Adequate peak reverse voltage rating for reliable operation in different circuit configurations.

Maximum Non Repetitive Peak Forward Current: 4 A

Capable of handling high peak forward currents for short durations without damage.

Diode Element Material: SILICON

Silicon diode element material offers stable and reliable performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers BAV99S,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV99S,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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