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BAV70M,315

NXP Semiconductors

BAV70M,315 by NXP Semiconductors

BAV70M,315 by NXP Semiconductors is a common cathode diode with 2 elements. It has a max forward voltage of 0.715V and can handle a max output current of 0.75A. This diode is commonly used in rectifier applications.

Median Price

$0.027

Lifecycle Status

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15

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1k+

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Rochester

USA . 77,940 parts In-Stock

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Verical

USA . 77,940 parts In-Stock

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Future Electronics

Canada . 60,000 parts In-Stock

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Chip1Stop

Japan . 20 parts In-Stock

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Digiode

USA . 4,529 parts In-Stock

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Nova Conductors

Japan . 94 parts In-Stock

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Chip Stock

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Bristol Electronics

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North Shore Components

USA . 28,310 parts In-Stock

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ComSIT Distribution GmbH

Germany . 21,659 parts In-Stock

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ComSIT USA

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NAC Semi

USA . 20,000 parts In-Stock

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VNN

France . 3,566 parts In-Stock

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Vyrian

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Anansix

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Semicontronic

India . 67,481 parts In-Stock

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Ampacity Inc.

Singapore . 64,990 parts In-Stock

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Corphita

USA . 668 parts In-Stock

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Component Stockers USA

USA . 228,139 parts In-Stock

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Corohmni

South Africa . 743 parts In-Stock

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Continental Prestige Electronics

USA . 5,212 parts In-Stock

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Argo Parts USA

USA . 3,441 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 300 parts In-Stock

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AZTECH Wire

Italy . 12,646 parts In-Stock

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Aztec Data Supply Inc.

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Eastek

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GreenTree Electronics

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Perfect Parts

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Netroflash

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Robosynatics

Brazil . 1,000 parts In-Stock

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Supply Digital

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Overview

Discover the BAV70M,315 by NXP Semiconductors, the ultimate solution for your diode and rectifier needs. With its superior quality and trusted manufacturer, this product offers unmatched reliability and performance. Whether you're designing circuit boards or working on electronics projects, the BAV70M,315 is the perfect choice. Its small outline package and common cathode configuration make it easy to integrate into any application. Enjoy its maximum output current of 0.75A and maximum forward voltage of 0.715V, providing exceptional power and efficiency. Trust NXP Semiconductors for all your semiconductor needs, and experience the value and advantages our products bring to your projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY. This material offers durability and protection, making the product resistant to external factors and ensuring long-lasting usage.

Config

COMMON CATHODE, 2 ELEMENTS. The common cathode configuration and two elements increase efficiency and allow for smoother current flow, making this product ideal for various electronic applications.

Surface Mount

YES. With surface-mount capability, this diode and rectifier can be easily incorporated onto circuit boards, reducing the overall size and improving space efficiency.

Maximum Reverse Recovery Time

0.004 us. The extremely fast reverse recovery time ensures minimal energy loss during switching, improving overall efficiency and performance.

Package Shape

RECTANGULAR. The rectangular shape makes it easy to mount and fit into existing circuits and equipment, making installation simpler and more convenient.

No. of Terminals

3. With three terminals, this diode and rectifier can handle multiple connections, offering versatility and allowing for the integration of complex circuits.

Package Style (Meter)

SMALL OUTLINE. The small outline package style minimizes the space needed for installation, making it suitable for compact devices and applications with limited room.

Maximum Operating Temperature

150 °C. The high maximum operating temperature allows for reliable and stable performance even in demanding environments, ensuring product durability and longevity.

Terminal Finish

TIN. The terminal finish with tin coating provides excellent conductivity and corrosion resistance, resulting in improved electrical performance and product reliability.

Terminal Position

DUAL. The dual terminal position provides flexibility in circuit designs and allows for various connection options, enabling customization and ease of integration.

Case Connection

CATHODE. The cathode case connection enhances heat dissipation and improves thermal management, preventing overheating and ensuring the product's operational effectiveness.

Maximum Power Dissipation

0.25 W. With a high maximum power dissipation, this diode and rectifier can handle significant power levels, making it suitable for applications with higher power requirements.

Maximum Time At Peak Reflow Temperature (s)

30. The long maximum time at peak reflow temperature allows for proper soldering during the assembly process, ensuring a reliable and secure connection.

Peak Reflow Temperature °C

260. The high peak reflow temperature enables efficient solder melting and bonding, guaranteeing a strong and durable connection during the manufacturing process.

Diode Type

RECTIFIER DIODE. As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC), making it an essential component in power supply circuits and other electronic systems.

Maximum Forward Voltage (VF)

0.715 V. The low maximum forward voltage drop minimizes energy losses and ensures efficient conversion and transfer of electrical power in various applications.

Maximum Output Current

0.75 A. With a high maximum output current, this diode and rectifier can handle significant current flows, making it suitable for demanding electrical circuits and applications.

Terminal Form

NO LEAD. The no-lead terminal form simplifies the mounting process and eliminates the need for additional lead bending or trimming, facilitating efficient and time-saving installation.

No. of Elements

2. With two elements, this diode and rectifier can handle multiple signals or currents simultaneously, enabling parallel processing and improving overall circuit efficiency.

Maximum Repetitive Peak Reverse Voltage

100 V. The high maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes, making it suitable for various applications where voltage fluctuations may occur.

Moisture Sensitivity Level (MSL)

1. The low moisture sensitivity level indicates that the product is highly resistant to moisture-induced damage, safeguarding its performance and reliability in environments with humidity or condensation.

Maximum Non-Repetitive Peak Forward Current

1 A. With a high maximum non-repetitive peak forward current, this diode and rectifier can handle short-duration current spikes, providing protection against sudden surges or transient events.

Diode Element Material

SILICON. The silicon diode element material offers excellent electrical characteristics, high temperature stability, and reliable performance, making it suitable for a broad range of electronic applications.

Technical Specifications

Diodes & Rectifiers BAV70M,315 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.75 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV70M,315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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