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BAV70,235

NXP Semiconductors

BAV70,235 by NXP Semiconductors

NXP Semiconductors' BAV70,235 diode features common cathode configuration with 2 elements. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.125 A. Ideal for rectification applications in electronic circuits due to its small outline package style and low forward voltage drop of 1.25 V.

Median Price

$0.020

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Newark

USA . 2,454,000 parts In-Stock

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Rochester

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EBV Elektronik

Germany . 1,530,000 parts In-Stock

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Avnet

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TTI

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Chip1Stop

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Verical

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Flip Electronics

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Digiode

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Nova Conductors

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Bristol Electronics

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NAC Semi

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LIBRA Elektronik GmbH

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New Zealand . 20 parts In-Stock

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Glotronic Ltd.

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Overview

Experience the next level of quality and performance with the NXP Semiconductors BAV70,235 diode. Designed for efficiency and reliability, this common cathode diode boasts a fast reverse recovery time and low reverse current, making it ideal for a variety of applications. With a small outline package and dual terminal position, this diode offers easy installation and maximum power dissipation of 0.25 W, ensuring optimal functionality. Trust NXP Semiconductors to provide you with top-of-the-line components that deliver unmatched value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for long-lasting performance.

Config: COMMON CATHODE, 2 ELEMENTS

Efficient design for improved circuit performance.

Maximum Reverse Recovery Time: 0.004 us

Fast switching speed for better efficiency.

Maximum Reverse Current: 2.5 uA

Low reverse current for reduced power consumption.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments.

Maximum Power Dissipation: 0.25 W

Can handle high power dissipation without damage.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop for energy efficiency.

Maximum Output Current: 0.125 A

Capable of handling moderate output currents.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltages safely.

Technical Specifications

Diodes & Rectifiers BAV70,235 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.125 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2.5 uA

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV70,235 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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