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BAV23/T3

NXP Semiconductors

BAV23/T3 by NXP Semiconductors

BAV23/T3 by NXP Semiconductors is a surface mount diode ideal for high-frequency applications. It features a max reverse recovery time of 0.05 µs, operates b/w -65 °C to 150 °C, and supports up to 250 V peak reverse voltage. Perfect for signal processing and switching circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,136 parts In-Stock

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Vyrian

USA . 2,282 parts In-Stock

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Anansix

USA . 1,677 parts In-Stock

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One Stop Electronics

USA . 522 parts In-Stock

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$2.010

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UNI Independent Distributors

Spain . 3,419 parts In-Stock

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Corphita

USA . 2,871 parts In-Stock

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Northwest PG Solutions

USA . 1,336 parts In-Stock

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Native Components

USA . 143 parts In-Stock

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Overview

Unlock superior performance with the BAV23/T3 diode from NXP Semiconductors, a trusted name in innovation. This versatile surface mount diode offers exceptional reliability and efficiency, perfect for various applications—from power management to signal processing. With its impressive thermal range and minimal reverse recovery time, it ensures optimal operation under challenging conditions. Elevate your designs with the quality and performance of NXP!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for compact and efficient circuit layouts, making it ideal for modern electronics.

Maximum Reverse Recovery Time: 0.05 us

A fast reverse recovery time ensures minimal switching losses, improving the performance in high-frequency applications.

Maximum Reverse Current: 100 µA

Low reverse current contributes to better efficiency and reduced power loss, enhancing overall device reliability.

Reverse Test Voltage: 200 V

High reverse test voltage capability enables use in various applications where voltage spikes can occur, offering added durability.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for operation in demanding environments, extending the product's reliability and lifespan.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures functionality in extreme conditions, making it suitable for aerospace and military applications.

Maximum Power Dissipation: 0.25 W

Moderate power dissipation allows for stable operation without overheating, suitable for various electronic applications.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop enhances efficiency by minimizing energy loss, which is crucial for battery-powered applications.

Maximum Repetitive Peak Reverse Voltage: 250 V

A high peak reverse voltage rating ensures resilience against voltage surges, making it ideal for robust electronic designs.

Technical Specifications

Other Function Diodes BAV23/T3 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

1.25 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.25 W

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

200 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAV23/T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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