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BAS416,115

NXP Semiconductors

BAS416,115 by NXP Semiconductors

NXP Semiconductors' BAS416,115 is a single rectifier diode with a max forward voltage of 0.9V and output current of 0.2A. It has a max repetitive peak reverse voltage of 85V and operates at temperatures up to 150°C. This small outline diode is ideal for applications requiring fast switching speeds in electronic circuits.

Median Price

$0.041

Lifecycle Status

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28

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1k+

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Rochester

USA . 3,000 parts In-Stock

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Distrelec

Netherlands . 2,211 parts In-Stock

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Elektronika Sales Private Limited

India . 159,000 parts In-Stock

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Farnell

UK . 154,181 parts In-Stock

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RS (Exports)

UK . 117,000 parts In-Stock

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Element14

Singapore . 93,640 parts In-Stock

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TTI

USA . 54,000 parts In-Stock

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Arrow

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Verical

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Chip1Stop

Japan . 856 parts In-Stock

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Digiode

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Nova Conductors

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Maritex

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NAC Semi

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Cyclops Electronics Ltd

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Chip Stock

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Bristol Electronics

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IBS Electronics

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Vyrian

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Ampacity Inc.

Singapore . 114,295 parts In-Stock

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Corphita

USA . 4,463 parts In-Stock

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Semicontronic

India . 517,426 parts In-Stock

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AZTECH Wire

Italy . 12,807 parts In-Stock

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Argo Parts USA

USA . 3,173 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Modulus Dynamics

Lithuania . 5,110 parts In-Stock

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Advanced Electronics

New Zealand . 400 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,256 parts In-Stock

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Perfect Parts

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RC Electronics

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ChipstoGo Electronic ltd

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Allen Electronics Distributors

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Continental Prestige Electronics

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Lucentia Tech

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Robosynatics

Brazil . 32,537 parts In-Stock

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Formix International (Excess)

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Glotronic Ltd.

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Supply Digital

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Corohmni

South Africa . 634 parts In-Stock

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Overview

Experience unmatched quality and reliability with the BAS416,115 diode by NXP Semiconductors. This small outline rectifier diode offers a fast maximum reverse recovery time of 3 us, making it ideal for a wide range of applications. With a maximum output current of 0.2 A and a maximum forward voltage of 0.9 V, this diode provides efficient power dissipation and performance. Trust NXP Semiconductors to deliver superior components that exceed expectations in both durability and functionality. Elevate your projects with the BAS416,115 diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 3 us

Fast reverse recovery time ensures efficient operation and minimal power loss.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Power Dissipation: 0.25 W

Efficiently dissipates power to prevent overheating and maintain stable operation.

Diode Type: RECTIFIER DIODE

Designed for rectification of AC signals into DC, making it suitable for power supply applications.

Maximum Output Current: 0.2 A

Can handle moderate current levels for various electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 85 V

Provides a high reverse voltage capability, making it suitable for voltage rectification applications.

Diode Element Material: SILICON

Silicon diodes offer reliable and consistent performance, making them a popular choice in electronics.

Technical Specifications

Diodes & Rectifiers BAS416,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS416,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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