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A3I35D012WNR1

NXP Semiconductors

A3I35D012WNR1 by NXP Semiconductors

NXP Semiconductors A3I35D012WNR1 is a RF amplifier with 26.5 dB gain, operating from 3200-4000 MHz. It has 2 functions, 17 terminals, and can handle up to 26 dBm input power. Ideal for narrow band medium power applications in the temperature range of -40 to 150°C.

Median Price

$35.250

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 49 parts In-Stock

1+ parts

$375.160

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49

$375.160

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Rochester

USA . 1,442 parts In-Stock

1+ parts

-

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$28.200

1k+ parts

$25.230

10k+ parts

$23.740

1,442

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$28.200

$25.230

$23.740

DigiKey

USA . 1,442 parts In-Stock

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1,442

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Verical

USA . 965 parts In-Stock

1+ parts

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100+ parts

$35.250

1k+ parts

$31.538

10k+ parts

$29.675

965

-

$35.250

$31.538

$29.675

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 685 parts In-Stock

1+ parts

$29.840

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685

$29.840

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Vyrian

USA . 4,611 parts In-Stock

1+ parts

$31.410

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4,611

$31.410

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Anansix

USA . 2,833 parts In-Stock

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2,833

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DigiKey Marketplace

USA . 371 parts In-Stock

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371

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Distributors (Availability)

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Native Components

USA . 204 parts In-Stock

1+ parts

$1.884

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204

$1.884

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Northwest PG Solutions

USA . 1,212 parts In-Stock

1+ parts

$2.072

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1,212

$2.072

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Corphita

USA . 988 parts In-Stock

1+ parts

$28.269

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988

$28.269

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Microchip USA

USA . 8,855 parts In-Stock

1+ parts

$70.060

100+ parts

$68.840

1k+ parts

$68.230

10k+ parts

$67.620

8,855

$70.060

$68.840

$68.230

$67.620

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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3,000

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UNI Independent Distributors

Spain . 2,462 parts In-Stock

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2,462

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Overview

Elevate your RF & Microwave applications with the A3I35D012WNR1 by NXP Semiconductors. This high-quality amplifier offers unparalleled performance and reliability, thanks to its manufacturer's proven track record in the industry. Ideal for narrowband medium power requirements, this component delivers a gain of 26.5 dB, ensuring optimal signal strength. With a wide operating temperature range and easy surface mount installation, this amplifier provides customers with exceptional value and flexibility. Upgrade your projects with the A3I35D012WNR1 and experience superior results firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable packaging for the amplifier, making it easy to handle and resistant to wear and tear.

Maximum Input Power (CW): 26 dBm

With a high maximum input power, this amplifier can handle strong input signals without distortion, ensuring reliable performance.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches common RF systems, making this amplifier compatible with a wide range of devices and applications.

Gain: 26.5 dB

With a high gain value, this amplifier can boost signal strength effectively, improving overall system performance.

Minimum Operating Frequency: 3200 MHz

This amplifier can operate at lower frequencies, allowing it to support a wider range of RF signals and applications.

Maximum Operating Frequency: 4000 MHz

Capable of operating at higher frequencies, this amplifier can handle a variety of RF signals and communication needs.

Technical Specifications

RF & Microwave Amplifiers A3I35D012WNR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

26.5 dB

Maximum Input Power (CW):

26 dBm

Mounting Feature:

No. of Functions:

2

No. of Terminals:

17

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

3200 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

FLNG,.72"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Trade Compliance

A3I35D012WNR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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