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A2I09VD050NR1

NXP Semiconductors

A2I09VD050NR1 by NXP Semiconductors

NXP Semiconductors A2I09VD050NR1 is a RF amplifier with 35dB gain, operating from 575MHz to 960MHz. It has a max input power of 20dBm and VSWR of 10, suitable for wide band high power applications in the RF & Microwave field. The LDMOS technology and surface mounting feature make it ideal for various wireless communication systems.

Median Price

$26.090

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 470 parts In-Stock

1+ parts

-

100+ parts

$28.500

1k+ parts

$25.762

10k+ parts

-

470

-

$28.500

$25.762

-

Rochester

USA . 470 parts In-Stock

1+ parts

-

100+ parts

$21.830

1k+ parts

$19.530

10k+ parts

$18.380

470

-

$21.830

$19.530

$18.380

Chip1Stop

Japan . 262 parts In-Stock

1+ parts

-

100+ parts

$34.700

1k+ parts

$34.500

10k+ parts

-

262

-

$34.700

$34.500

-

Richardson RFPD

USA . 27 parts In-Stock

1+ parts

-

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-

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$23.680

10k+ parts

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27

-

-

$23.680

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,785 parts In-Stock

1+ parts

$23.038

100+ parts

-

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3,785

$23.038

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-

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Vyrian

USA . 557 parts In-Stock

1+ parts

$24.250

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-

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557

$24.250

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Anansix

USA . 2,242 parts In-Stock

1+ parts

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2,242

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-

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Flip Electronics

USA . 490 parts In-Stock

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490

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ComSIT Distribution GmbH

Germany . 188 parts In-Stock

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188

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Bristol Electronics

USA . 150 parts In-Stock

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150

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Dan-Mar Components

USA . 150 parts In-Stock

1+ parts

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 694 parts In-Stock

1+ parts

$0.934

100+ parts

-

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694

$0.934

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Northwest PG Solutions

USA . 1,466 parts In-Stock

1+ parts

$1.027

100+ parts

-

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1,466

$1.027

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Corphita

USA . 4,832 parts In-Stock

1+ parts

$21.825

100+ parts

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4,832

$21.825

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UNI Independent Distributors

Spain . 5,447 parts In-Stock

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5,447

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Overview

NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with superior integration and functionality, enabling high-quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These NXP Semiconductors drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the amplifier, making it suitable for various environments and applications.

Maximum Input Power (CW): 20 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion or damage.

Maximum Voltage Standing Wave Ratio: 10

A low VSWR ensures efficient power transfer and minimal signal loss in the system.

Power Supplies (V): 48

Operating at 48 volts allows for high power output and reliable performance.

Technology: LDMOS

The LDMOS technology used in this amplifier provides high efficiency and linearity, resulting in high performance.

Gain: 35 dB

With a high gain level, this amplifier can boost signal strength effectively for various applications.

Minimum Operating Frequency: 575 MHz

Operating at a low frequency of 575 MHz allows for compatibility with a wide range of systems and devices.

Maximum Operating Frequency: 960 MHz

The high maximum operating frequency enables this amplifier to handle a broad range of RF and microwave signals.

Technical Specifications

RF & Microwave Amplifiers A2I09VD050NR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

35 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Frequency:

960 MHz

Minimum Operating Frequency:

575 MHz

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

48

RF or Microwave Device Type:

Technology:

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

A2I09VD050NR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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