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272216208781

NXP Semiconductors

272216208781 by NXP Semiconductors

The NXP 272216208781 is an RF isolator module designed for high-performance applications. It supports a max input power of 46.02 dBm, operates b/w 925 MHz and 960 MHz, and maintains a low insertion loss of just 0.35 dB. Ideal for communication systems, it functions effectively in temperatures from -10 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,629 parts In-Stock

1+ parts

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1,629

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Digiode

USA . 1,585 parts In-Stock

1+ parts

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1,585

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Anansix

USA . 1,283 parts In-Stock

1+ parts

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1,283

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,453 parts In-Stock

1+ parts

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2,453

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Overview

Elevate your RF applications with the NXP Semiconductors 272216208781 isolator, designed for reliability and performance. With its robust construction and impressive power handling, this module ensures exceptional signal integrity while reducing interference. Operating seamlessly in demanding environments from -10 °C to 85 °C, it delivers unparalleled quality that NXP is renowned for. Experience enhanced efficiency and peace of mind, knowing you’re backed by a trusted manufacturer in the semiconductor industry.

Feature Benefit Bullets

Maximum Input Power (CW): 46.02 dBm

This high input power rating makes the isolator suitable for demanding applications, ensuring reliable performance even in high-power systems.

Maximum Voltage Standing Wave Ratio: 1.2

A low VSWR indicates excellent impedance matching, minimizing reflections and improving overall system efficiency.

Construction: MODULE

The modular construction allows for easy integration into various systems and simplifies configuration in compact spaces.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this isolator can function effectively in challenging environments, enhancing reliability and longevity.

Minimum Operating Temperature: -10 °C

This wide temperature range ensures operation in diverse conditions, making the device versatile for various applications.

Maximum Insertion Loss: 0.35 dB

The low insertion loss ensures minimal signal degradation, contributing to superior system performance.

RF or Microwave Device Type: ISOLATOR

As an isolator, this device protects sensitive components from reflected power, making it essential for safeguarding system integrity.

Minimum Operating Frequency: 925 MHz

This frequency capability allows compatibility with a wide range of RF applications, broadening its usability.

Maximum Operating Frequency: 960 MHz

The high maximum frequency ensures effective performance at upper limits of the operating range, making it suitable for high-frequency applications.

Technical Specifications

RF/Microwave Isolator/Circulators 272216208781 attributes and parameters. Explore more RF/Microwave Isolator/Circulators devices from NXP Semiconductors

Specs

Construction:

MODULE

Maximum Input Power (CW):

46.02 dBm

Maximum Insertion Loss:

.35 dB

Maximum Operating Frequency:

960 MHz

Minimum Operating Frequency:

925 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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