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BD780

New Jersey Semiconductor Products

BD780 by New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 750;

Median Price

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Lifecycle Status

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Vyrian

USA . 1,584 parts In-Stock

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Digiode

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LittleDiode

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Native Components

USA . 67 parts In-Stock

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Northwest PG Solutions

USA . 2,337 parts In-Stock

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TANS Electronics

Latvia . 7,825 parts In-Stock

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SupplyDigital Components

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Kepictronics

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Corphita

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Corohmni

South Africa . 288 parts In-Stock

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Assy Fe

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BD780 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New Jersey Semiconductor Products

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

750

No. of Elements:

1

Polarity or Channel Type:

PNP

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD780 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-367-5819, 5961013675819

NIIN

013675819

Manufacturer Highlights

New Jersey Semiconductor Products

New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.

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