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JANTX2N2222AL

New England Semiconductor

JANTX2N2222AL by New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

Median Price

$49.040

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

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Digiode

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.548

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$0.499

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$0.449

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Corohmni

South Africa . 119 parts In-Stock

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Component Stockers USA

USA . 1,338 parts In-Stock

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Fulton Briggs Corp.

USA . 5,905 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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TANS Electronics

Latvia . 5,147 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,244 parts In-Stock

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Problanco Electronics

Mexico . 2,299 parts In-Stock

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Perfect Parts

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UHIMA Technologies

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Corphita

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N2222AL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-206AA

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-19500/255

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N2222AL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-083-2461, 5961010832461

NIIN

010832461

PCN

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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