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JAN2N3767

New England Semiconductor

JAN2N3767 by New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 1 A;

Median Price

$28.390

Lifecycle Status

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Microchip Technology

USA . 192 parts In-Stock

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American Microsemiconductor Inc.

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Vyrian

USA . 5,985 parts In-Stock

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North Shore Components

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Microchip USA

USA . 4,985 parts In-Stock

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Fulton Briggs Corp.

USA . 4,835 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) JAN2N3767 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-213AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

20 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

12.5 V

Trade Compliance

JAN2N3767 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-093-9468, 5961010939468, 5961-01-102-0439, 5961011020439

NIIN

010939468, 011020439

PCN

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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