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GA1L3N-A

Nec Electronics

GA1L3N-A by Nec Electronics

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3N-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 0.213

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

6000 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

GA1L3N-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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