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GA1L3ZL36

Nec Electronics America

GA1L3ZL36 by Nec Electronics America

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING; Minimum DC Current Gain (hFE): 135;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 792 parts In-Stock

1+ parts

$1.300

100+ parts

-

1k+ parts

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10k+ parts

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792

$1.300

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-

-

Northwest PG Solutions

USA . 735 parts In-Stock

1+ parts

$1.430

100+ parts

-

1k+ parts

-

10k+ parts

-

735

$1.430

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3ZL36 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

135

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

GA1L3ZL36 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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