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FA4F3P

Nec Electronics America

FA4F3P by Nec Electronics America

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 4.55;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 920 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.542

10k+ parts

-

920

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$4.542

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Native Components

USA . 632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.496

10k+ parts

-

632

-

-

$4.496

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Kepictronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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200

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-

-

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FA4F3P attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 4.55

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

FA4F3P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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