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FA4F3M-A

Nec Electronics America

FA4F3M-A by Nec Electronics America

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 896 parts In-Stock

1+ parts

$27.780

100+ parts

-

1k+ parts

-

10k+ parts

-

896

$27.780

-

-

-

Northwest PG Solutions

USA . 1,441 parts In-Stock

1+ parts

$30.558

100+ parts

$27.502

1k+ parts

-

10k+ parts

-

1,441

$30.558

$27.502

-

-

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FA4F3M-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Trade Compliance

FA4F3M-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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