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UPC1687G-E1

Nec Compound Semiconductor Devices

UPC1687G-E1 by Nec Compound Semiconductor Devices

VIDEO TUNER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Median Price

$1.464

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netsource Technology, Inc.

USA . 23,746 parts In-Stock

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23,746

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Elcom Components

USA . 1,789 parts In-Stock

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1,789

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Bristol Electronics

USA . 445 parts In-Stock

1+ parts

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100+ parts

$1.464

1k+ parts

$1.286

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445

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$1.464

$1.286

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 6,233 parts In-Stock

1+ parts

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100+ parts

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6,233

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Technical Specifications

Silicon Tuner ICs UPC1687G-E1 attributes and parameters. Explore more Silicon Tuner ICs devices from Nec Compound Semiconductor Devices

Specs

Built-in IF Amplifier (IF):

YES

General IC Type:

Maximum Input Frequency (RF):

900 MHz

Minimum Input Frequency (RF):

500 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e6

Length:

5.2 mm

Nominal Noise Figure:

10 dB

No. of Bands:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.77 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

4.4 mm

Trade Compliance

UPC1687G-E1 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Nec Compound Semiconductor Devices

Tokyo, March 14, 2002 - NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) and Sumitomo Electric Industries, Ltd. (SEI) today announced they have joined into a multi-source agreement (MSA) to set a common architecture for 10 Gigabit per second (Gbps) detector modules used in optical networking. Sample shipments will start from today of products based on this common standard. The new device is developed to work within the 1.3 micron ~ 1.55 micron wavelength range and is mounted with a amplifier on the industry's smallest class of metal ceramic packages (L x W x H = 9.8mm x 7.5mm x 4.0mm). This super-small module addresses the calls coming from the industry for downsizing of 10 Gbps optical network transceivers. The detector module facilitates conversion of optical signals to electric signals and is one of the essential devices for 10 Gbps digital transmissions over optical fiber networks. NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) is a leading provider of opticaland microwave devices, committed to meeting the specialized needs of its customers in the broadband and mobile networking fields with its compound and silicon semiconductor technologies. NEC Compound Semiconductor Devices, was divided from NEC Corporation and established in October 2001.

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