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UPC1663GV-E1

Nec Compound Semiconductor Devices

UPC1663GV-E1 by Nec Compound Semiconductor Devices

OPERATIONAL AMPLIFIER; Temperature Grade: OTHER; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SSOP; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Chip Stock

USA . 4,700 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Corohmni

South Africa . 24 parts In-Stock

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Aztec Data Supply Inc.

USA . 571 parts In-Stock

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AZTECH Wire

Italy . 837 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,352 parts In-Stock

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Continental Prestige Electronics

USA . 6,025 parts In-Stock

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Argo Parts USA

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Kepictronics

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Bastille Electronics

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Technical Specifications

Operational Amplifiers (Op Amps) UPC1663GV-E1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Nec Compound Semiconductor Devices

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Unity Gain Bandwidth:

700 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

94 dB

Peak Bias Current:

40 uA

Operational Characteristics

Nominal Supply Voltage:

6 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

-6 V

Minimum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

-45 °C (-49 °F)

Maximum Operating Temperature:

75 °C (167 °F)

Physical Characteristics

Length:

0.126 in (3.2 mm)

Maximum Seated Height:

0.071 in (1.8 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Shrink Pitch

Trade Compliance

UPC1663GV-E1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Nec Compound Semiconductor Devices

Tokyo, March 14, 2002 - NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) and Sumitomo Electric Industries, Ltd. (SEI) today announced they have joined into a multi-source agreement (MSA) to set a common architecture for 10 Gigabit per second (Gbps) detector modules used in optical networking. Sample shipments will start from today of products based on this common standard. The new device is developed to work within the 1.3 micron ~ 1.55 micron wavelength range and is mounted with a amplifier on the industry's smallest class of metal ceramic packages (L x W x H = 9.8mm x 7.5mm x 4.0mm). This super-small module addresses the calls coming from the industry for downsizing of 10 Gbps optical network transceivers. The detector module facilitates conversion of optical signals to electric signals and is one of the essential devices for 10 Gbps digital transmissions over optical fiber networks. NEC Compound Semiconductor Devices, Ltd. (NEC Compound Semiconductor Devices) is a leading provider of opticaland microwave devices, committed to meeting the specialized needs of its customers in the broadband and mobile networking fields with its compound and silicon semiconductor technologies. NEC Compound Semiconductor Devices, was divided from NEC Corporation and established in October 2001.

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