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IRF432

National Semiconductor

IRF432 by National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): 4 A;

Median Price

$1.600

Lifecycle Status

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Rochester

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$1.540

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$1.280

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$1.140

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DigiKey

USA . 1,192 parts In-Stock

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$1.930

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Verical

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$1.425

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Digiode

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Anansix

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Technical Specifications

Power Field Effect Transistors (FET) IRF432 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from National Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

IRF432 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-249-7590, 5961012497590, 5961-01-204-4885, 5961012044885

NIIN

012497590, 012044885

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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