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MTW33N10E

Motorola

MTW33N10E by Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 99 A;

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In-Stock Inventory

< 1k

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Spain . 30 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) MTW33N10E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Motorola

Specs

Avalanche Energy Rating (EAS):

545 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

33 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AE

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

99 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MTW33N10E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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