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MTP4N50

Motorola

MTP4N50 by Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Qualification: Not Qualified; JEDEC-95 Code: TO-220AB;

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Technical Specifications

Power Field Effect Transistors (FET) MTP4N50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Motorola

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

80 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

75 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

150 ns

Trade Compliance

MTP4N50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-191-3344, 5961011913344

NIIN

011913344

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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