Loading...

SST26VF032B-80E/SM

Microchip Technology

SST26VF032B-80E/SM by Microchip Technology

SST26VF032B-80E/SM by Microchip: NOR flash memory with 80MHz clock, 4Mx8 organization. Automotive grade for applications requiring high endurance and 2.5V programming voltage. Serial SPI interface, 100K write/erase cycles, and AEC-Q100 screening level make it ideal for automotive electronics.

Median Price

$2.520

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 30,088 parts In-Stock

1+ parts

$2.520

100+ parts

$2.330

1k+ parts

$2.210

10k+ parts

$2.080

30,088

$2.520

$2.330

$2.210

$2.080

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

West Coast Incorporated

USA . 5,884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,884

-

-

-

-

Overview

Unlock the power of reliable and high-quality flash memory with Microchip Technology's SST26VF032B-80E/SM. Designed for a wide range of applications, this NOR type memory offers 4M x 8 organization, automotive-grade temperature tolerance, and 100,000 write/erase cycles for lasting performance. With a small outline package style and dual terminal position, this EEPROM memory provides seamless integration and efficient operation. Trust in Microchip's proven track record of excellence and elevate your projects with the cutting-edge technology of the SST26VF032B-80E/SM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the flash memory, ensuring reliability in various environments.

Operating Mode: SYNCHRONOUS

Allows for faster data transfer speeds and efficient operation in synchronous systems.

Maximum Clock Frequency (fCLK): 80 MHz

High clock frequency enables quick access to data and improved performance of the flash memory.

Organization: 4MX8

Organized in 4 million cells of 8 bits each, offering a large memory capacity for storing data.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive temperature ranges, making it suitable for use in automotive electronics applications.

Endurance: 100000 Write/Erase Cycles

The flash memory can endure a high number of write and erase cycles, ensuring longevity and reliability in data storage.

Serial Bus Type: SPI

Utilizes the Serial Peripheral Interface (SPI) for communication, enabling easy integration with other devices and efficient data transfer.

Memory Density: 33554432 bit

Offers a high memory density, allowing for the storage of a large amount of data in a compact form factor.

Memory IC Type: EEPROM

Utilizes Electrically Erasable Programmable Read-Only Memory (EEPROM) technology, providing non-volatile memory storage with the ability to be reprogrammed.

Technical Specifications

Flash Memory SST26VF032B-80E/SM attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

80 MHz

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

5.26 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.5

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000045 Amp

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Type:

NOR TYPE

Width:

5.25 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

SST26VF032B-80E/SM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.