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MCP6H02-E/SNVAO

Microchip Technology

MCP6H02-E/SNVAO by Microchip Technology

MCP6H02-E/SNVAO by Microchip Technology is a CMOS Operational Amplifier with 3500uV Max Input Offset Voltage, 100dB Nominal CMRR, and 1200kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening level and low-bias micropower design. Package style is small outline with dual terminals in gull wing form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,259 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 1,261 parts In-Stock

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$9.410

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AZTECH Wire

Italy . 548 parts In-Stock

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$13.486

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XL Components Corporation

Australia . 6,964 parts In-Stock

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QualityLine Systems

Poland . 6,392 parts In-Stock

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Microchip USA

USA . 2,778 parts In-Stock

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Argo Parts USA

USA . 2,467 parts In-Stock

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Vigor

Singapore . 2,370 parts In-Stock

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Continental Prestige Electronics

USA . 1,204 parts In-Stock

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Marpe Global Electronics

Taiwan . 766 parts In-Stock

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Aranea Global

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Overview

Discover the MCP6H02-E/SNVAO by Microchip Technology, a top-tier operational amplifier designed to elevate your electronic projects with precision and reliability. Crafted with the highest quality materials and cutting-edge technology, this op amp offers unparalleled performance in automotive applications, ensuring optimal functionality under extreme conditions. Experience the benefits of Micropower technology, low-bias current, and superior frequency compensation in a compact package that delivers exceptional value to our customers. Trust in Microchip Technology for all your operational amplifier needs and unlock endless possibilities in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the operational amplifier.

Maximum Input Offset Voltage: 3500 uV

Low input offset voltage ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB): 0.025 uA

Low bias current helps in reducing power consumption and improving efficiency.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 100 dB

High common mode reject ratio helps in rejecting noise and interference for cleaner signal output.

Nominal Supply Voltage / Vsup (V): 5

Nominal supply voltage of 5V is suitable for many applications.

Maximum Supply Voltage Limit: 17 V

Wide supply voltage range allows for flexibility in power supply design.

Maximum Operating Temperature: 125 °C

High operating temperature range makes it suitable for automotive and industrial applications.

Frequency Compensation: YES

Frequency compensation ensures stability and performance over a wide range of frequencies.

Minimum Voltage Gain: 56200

High minimum voltage gain ensures amplification of weak signals effectively.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) MCP6H02-E/SNVAO attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Microchip Technology

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

84 dB

Input Offset Voltage Limit:

3500 uV

Minimum Voltage Gain:

56200

Nominal Slew Rate:

0.8 V/us

Peak Bias Current:

25 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

17 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

370 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Screening Level:

AEC-Q100; TS 16949

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

MCP6H02-E/SNVAO Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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