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MCP662T-E/MSVAO

Microchip Technology

MCP662T-E/MSVAO by Microchip Technology

MCP662T-E/MSVAO by Microchip Tech is an Op Amp with 8000uV Max Input Offset Voltage, 81dB CMRR, and 60000kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening level, low-bias operation, and compact design with 8 terminals in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,653 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 389 parts In-Stock

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$7.410

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389

$7.410

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AZTECH Wire

Italy . 892 parts In-Stock

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$13.589

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XL Components Corporation

Australia . 7,230 parts In-Stock

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QualityLine Systems

Poland . 6,825 parts In-Stock

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Argo Parts USA

USA . 4,201 parts In-Stock

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Continental Prestige Electronics

USA . 2,637 parts In-Stock

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Marpe Global Electronics

Taiwan . 2,474 parts In-Stock

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iodParts Technologies Inc.

India . 2,166 parts In-Stock

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Vigor

Singapore . 1,980 parts In-Stock

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Microchip USA

USA . 979 parts In-Stock

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979

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Unlock the power of precision with the MCP662T-E/MSVAO by Microchip Technology. This high-quality operational amplifier is designed for a wide range of applications, delivering reliable performance and unmatched versatility. With a compact package and advanced technology, this product offers customers exceptional value, superior benefits, and undeniable advantages. Experience seamless integration and enhanced functionality like never before with the MCP662T-E/MSVAO.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the operational amplifier, making it suitable for harsh environments.

Maximum Input Offset Voltage: 8000 uV

Low input offset voltage ensures accuracy in signal processing applications, making this operational amplifier a reliable choice for precision circuits.

Maximum Average Bias Current (IIB): 0.005 uA

Low bias current helps in reducing power consumption and maintaining stability in the circuit, making this operational amplifier energy-efficient.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 81 dB

High common mode rejection ratio ensures minimal noise interference in the output signal, making this operational amplifier suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 2.5

Low supply voltage requirement makes this operational amplifier suitable for low-power applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making this operational amplifier efficient and versatile for various circuit designs.

Nominal Unity Gain Bandwidth: 60000 kHz

High unity gain bandwidth allows for high-speed signal processing, making this operational amplifier ideal for applications requiring fast response times.

Technical Specifications

Operational Amplifiers (Op Amps) MCP662T-E/MSVAO attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Microchip Technology

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

60 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

81 dB

Minimum Common Mode Rejection Ratio (CMRR ):

66 dB

Input Offset Voltage Limit:

8000 uV

Minimum Voltage Gain:

25100

Nominal Slew Rate:

32 V/us

Peak Bias Current:

5 nA

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

6.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

18 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

MCP662T-E/MSVAO Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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