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JANTXV1N5314-1

Microchip Technology

JANTXV1N5314-1 by Microchip Technology

JANTXV1N5314-1 by Microchip Tech is a single current regulator diode with 4.7mA nominal regulation current and 2.9V max limiting voltage. It has an axial terminal position, isolated case connection, and wire terminal form. Ideal for applications requiring precise current control in military-grade electronics per MIL-19500/463 standards.

Median Price

$62.115

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Microchip Technology

USA . 41 parts In-Stock

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$56.180

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Mouser Electronics

USA . 13 parts In-Stock

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$68.050

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$52.160

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Freelance Electronics

USA . 109 parts In-Stock

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$42.414

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$44.534

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$41.989

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$42.414

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Nova Conductors

Japan . 76 parts In-Stock

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$60.190

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Vyrian

USA . 7,306 parts In-Stock

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Mil-Aero Solutions, Inc.

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Electronics Depot

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AZTECH Wire

Italy . 318 parts In-Stock

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$16.148

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Continental Prestige Electronics

USA . 896 parts In-Stock

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Microchip USA

USA . 2,893 parts In-Stock

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Fulton Briggs Corp.

USA . 3,224 parts In-Stock

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Argo Parts USA

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Netroflash

USA . 1,000 parts In-Stock

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$58.986

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$57.180

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$55.977

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$58.986

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$55.977

Overview

Experience the unmatched quality and reliability of Microchip Technology with the JANTXV1N5314-1 Current Regulator Diode. This single-configured diode provides precise current regulation at 4.7 mA, making it ideal for a variety of applications. With a package shape of round and terminal finish of tin lead, this diode offers superior performance and durability. Trust in Microchip Technology to deliver cutting-edge technology that meets the highest industry standards, providing you with the value and benefits you need for your projects.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to implement and reduces complexity in the circuit design.

Package Shape: ROUND

Round package shape is compact and suitable for applications where space is limited.

Nominal Regulation Current (Ireg): 4.7 mA

Provides a reliable and stable current regulation at 4.7 mA, suitable for various electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connectivity and integration of the diode into the circuit.

Package Style (Meter): LONG FORM

The long form package style allows for easy handling and installation in different applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliability in electrical connections.

Terminal Position: AXIAL

Axial terminal position aids in easy mounting and connection in a linear arrangement.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents unwanted electrical interference.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, the diode can handle heat dissipation effectively.

Reference Standard: MIL-19500/463

Compliance with MIL-19500/463 standard ensures high quality and reliability for military applications.

Diode Type: CURRENT REGULATOR DIODE

Specifically designed as a current regulator diode for precise current control in electronic circuits.

Technology: FIELD EFFECT

Field effect technology offers efficient performance and low power consumption in the diode operation.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection and installation of the diode.

Maximum Limiting Voltage: 2.9 V

With a maximum limiting voltage of 2.9 V, it protects connected components from voltage spikes.

Diode Element Material: SILICON

Silicon diode element material ensures reliability, stability, and consistent performance over time.

Technical Specifications

Current Regulator Diodes JANTXV1N5314-1 attributes and parameters. Explore more Current Regulator Diodes devices from Microchip Technology

Specs

Additional Features:

METALLURGICALLY BONDED

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Maximum Limiting Voltage:

2.9 V

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/463

Nominal Regulation Current (Ireg):

4.7 mA

Surface Mount:

NO

Technology:

FIELD EFFECT

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTXV1N5314-1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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