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JAN1N5314-1

Microchip Technology

JAN1N5314-1 by Microchip Technology

JAN1N5314-1 by Microchip Tech is a single current regulator diode with 4.7mA nominal regulation current and 2.9V max limiting voltage. It has an axial terminal position, isolated case connection, and uses silicon as the diode element material. Ideal for applications requiring precise current control in military-grade electronics per MIL-19500/463 standard.

Median Price

$23.900

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Arrow

USA . 2 parts In-Stock

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$23.900

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Verical

USA . 2 parts In-Stock

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$23.900

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Microchip Technology

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$26.960

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Nova Conductors

Japan . 10 parts In-Stock

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$26.450

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Freelance Electronics

USA . 20 parts In-Stock

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$35.816

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$37.607

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$35.458

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$96.290

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Vyrian

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ACDS - Activité Composants Distribution Service

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Flip Electronics

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Resion

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AZTECH Wire

Italy . 442 parts In-Stock

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$11.052

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Component Stockers USA

USA . 4 parts In-Stock

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$25.610

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Continental Prestige Electronics

USA . 2,007 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$26.450

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Microchip USA

USA . 8,545 parts In-Stock

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West Coast Incorporated

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Argo Parts USA

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Looking for a reliable current regulator diode for your electronic projects? Look no further than the JAN1N5314-1 by Microchip Technology. With a reputation for quality and innovation in the industry, Microchip ensures that this diode meets the highest standards for performance and reliability. Whether you're working on precision voltage regulation or LED driver circuits, this diode offers a nominal regulation current of 4.7 mA and a maximum limiting voltage of 2.9 V. Trust Microchip's expertise to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Nominal Regulation Current (Ireg): 4.7 mA

The 4.7 mA regulation current makes this diode suitable for applications requiring precise current control.

No. of Terminals: 2

With 2 terminals, this diode is easy to connect and integrate into circuits.

Maximum Power Dissipation: 0.5 W

The 0.5 W maximum power dissipation ensures the diode can handle high power levels without overheating.

Diode Type: CURRENT REGULATOR DIODE

As a current regulator diode, this product is specifically designed to maintain a constant current flow.

Technology: FIELD EFFECT

The field effect technology used in this diode provides efficient current regulation and low power consumption.

Maximum Limiting Voltage: 2.9 V

The 2.9 V maximum limiting voltage protects the diode from voltage spikes and ensures its longevity.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high reliability and stability in various operating conditions.

Technical Specifications

Current Regulator Diodes JAN1N5314-1 attributes and parameters. Explore more Current Regulator Diodes devices from Microchip Technology

Specs

Additional Features:

METALLURGICALLY BONDED

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Maximum Limiting Voltage:

2.9 V

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/463

Nominal Regulation Current (Ireg):

4.7 mA

Surface Mount:

NO

Technology:

FIELD EFFECT

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JAN1N5314-1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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