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IXTK400N15X4

Littelfuse

IXTK400N15X4 by Littelfuse

IXTK400N15X4 by Littelfuse is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 900A IDM and 3000mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 1500W and -55 to 175 °C temperature range, it offers high performance in various industrial settings.

Median Price

$56.615

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Mouser Electronics

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Arrow

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Verical

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Overview

Power up your applications with the Littelfuse IXTK400N15X4 Power Field Effect Transistor. Manufactured by industry leader Littelfuse, this N-CHANNEL transistor offers reliable switching capabilities and a durable plastic/epoxy housing. With a maximum pulsing drain current of 900A and an avalanche energy rating of 3000mJ, this transistor is designed to handle high-power tasks effortlessly. Whether you're in automotive, industrial, or consumer electronics, the IXTK400N15X4 delivers unmatched performance and efficiency. Upgrade your projects today with this high-quality transistor from Littelfuse.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and fast switching speeds, making them suitable for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides reverse polarity protection, enhancing overall functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers reliable performance in control circuits and power distribution systems.

Minimum DS Breakdown Voltage: 150 V

With a high breakdown voltage, this FET can handle higher voltages without the risk of damage, ensuring long-term reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation in tight spaces, making it versatile for various electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer strong mechanical connections and ease of soldering, ensuring a secure and reliable connection.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for precise control of the FET's on/off state, improving efficiency in power management systems.

Maximum Pulsed Drain Current (IDM): 900 A

With a high pulsed drain current rating, this FET can handle sudden surges in current, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 3000 mJ

The high avalanche energy rating makes this FET robust against voltage spikes and transient events, enhancing system protection.

No. of Terminals: 3

The three terminals provide flexibility in circuit connections and enable versatile usage in different electronic setups.

Maximum Power Dissipation (Abs): 1500 W

The high power dissipation capability allows the FET to handle heavy loads and high power applications efficiently.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mechanical mounting and heat dissipation, ensuring reliable performance in challenging environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology provides high performance, low power consumption, and increased efficiency in power management applications.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this FET can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and compatibility with various electronic systems, ensuring consistent operation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows the FET to operate in harsh environments and cold conditions, expanding its usability.

Maximum Drain Current (ID): 400 A

The high drain current rating enables the FET to handle heavy loads and high power applications with ease.

Maximum Drain-Source On Resistance: 0.0031 ohm

With a low on-resistance, this FET minimizes power loss and heat generation, improving overall efficiency in power management systems.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and enhances ease of use in electronic setups.

Case Connection: DRAIN

The drain case connection offers a convenient point for heat dissipation and aids in efficient thermal management of the FET.

Maximum Feedback Capacitance (Crss): 8 pF

The low feedback capacitance minimizes the risk of signal distortion and interference, ensuring accurate and reliable performance in signal processing applications.

Technical Specifications

Power Field Effect Transistors (FET) IXTK400N15X4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

3000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

400 A

Maximum Drain-Source On Resistance:

.0031 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

900 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTK400N15X4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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