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T555B406K030AT

KEMET Corporation

T555B406K030AT by KEMET Corporation

KEMET T555B406K030AT is a 40uF, 30V Tantalum Capacitor with low ESR of 170mohm. Ideal for SMT applications, it has Tan Delta of 0.05 and operates b/w -55 to +105 °C. Suitable for high ripple current circuits due to its low leakage current of 0.009mA.

Median Price

$50.375

Lifecycle Status

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2

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

USA . 2,303 parts In-Stock

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Ampacity Inc.

Singapore . 614 parts In-Stock

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$0.010

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AZTECH Wire

Italy . 808 parts In-Stock

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$5.243

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 522 parts In-Stock

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Argo Parts USA

USA . 1,944 parts In-Stock

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Overview

Upgrade your electronics with the T555B406K030AT by KEMET Corporation, a high-quality fixed capacitor that promises reliability and performance. With its solid polymer tantalum dielectric material, this capacitor boasts low tan delta and leakage current, ensuring efficient operation. Ideal for various applications, this surface mount capacitor offers a ripple current of 127.5 mA and a capacitance of 40 uF, making it a versatile choice for your projects. Trust in KEMET Corporation's expertise and elevate your designs with the T555B406K030AT.

Feature Benefit Bullets

Dielectric Material: TANTALUM (SOLID POLYMER)

Tantalum solid polymer dielectric material offers high reliability and stable performance, making this capacitor suitable for long-term use in various applications.

Tan Delta: 0.05

Low tan delta indicates minimal loss in the capacitor, ensuring efficient operation with low power dissipation.

Leakage Current (mA): 0.009

Low leakage current helps in maintaining the charge stored in the capacitor for longer durations, enhancing its performance and reliability.

Ripple Current (mA): 127.5

High ripple current handling capability ensures stable and reliable operation, especially in circuits with varying loads or fluctuations.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this capacitor can withstand elevated temperatures, making it suitable for use in demanding environmental conditions.

Capacitance: 40 uF

With a capacitance of 40uF, this capacitor offers sufficient charge storage capacity for various circuit applications, ensuring smooth and stable operation.

Rated DC Voltage (URdc): 30 V

With a rated DC voltage of 30V, this capacitor is capable of handling higher voltages, making it suitable for use in applications where voltage spikes or fluctuations may occur.

Technical Specifications

Fixed Capacitors T555B406K030AT attributes and parameters. Explore more Fixed Capacitors devices from KEMET Corporation

Specs

Additional Features:

ESR IS MEASURED AT 100 KHZ, RIPPLE CURRENT IS MEASURED AT 40KHZ

Capacitance:

Capacitor Type:

Dielectric Material:

Equivalent Series Resistance / ESR (mohm ):

170

Height:

9.1 mm

JESD-609 Code:

e3

Leakage Current (mA):

0.009

Length:

24.5 mm

Mounting Feature:

Negative Tolerance:

10 %

No. of Terminals:

2

Maximum Operating Temperature:

Minimum Operating Temperature:

-55 Cel

Package Style (Meter):

SMT

Packing Method:

Bulk

Polarity:

POLARIZED

Positive Tolerance:

10 %

Rated DC Voltage (URdc):

Ripple Current (mA):

127.5

Size Code:

9633

Tan Delta:

0.05

Terminal Finish:

TIN

Terminal Shape:

J BEND

Width:

8.5 mm

Trade Compliance

T555B406K030AT Capacitors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8532.21.00.50

SB

8532.21.00.50

Manufacturer Highlights

KEMET Corporation

KEMET Corporation is an American electronics company that specializes in the design, manufacturing, and distribution of capacitors, electromagnetic compatibility solutions, and other electronic components. The company was founded in 1919 and is headquartered in Fort Lauderdale, Florida, with manufacturing facilities and sales offices around the world. KEMET Corporation and its subsidiaries (KEMET), is a wholly owned subsidiary of Yageo Corporation (TAIEX: 2327).

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Management team

CEO

William M. Lowe, Jr.

Executive VP & CFO

Gregory C. Thompson

Executive VP & President - TOKIN Corporation

Shigenori (Sean) Oyama

Manufacturer fab locations 25

Fab name Location Fab Initiation Wafer Capacity

Advanced Tantalum Manufacturing

Fabrication

Fab Initiation

-

USA

Simpsonville

Wafer Capacity

382

-

382

FELCO

Fabrication

Fab Initiation

-

USA

Chicago

Wafer Capacity

-

-

Fabrication

Fab Initiation

-

USA

Fort Lauderdale

Wafer Capacity

61

-

61

-

Fabrication

Fab Initiation

-

Indonesia

Batam

Wafer Capacity

68

-

68

-

Fabrication

Fab Initiation

-

China

Anting-Shanghai

Wafer Capacity

73

-

73

-

Fabrication

Fab Initiation

-

Mexico

Matamoros

Wafer Capacity

286

-

286

-

Fabrication

Fab Initiation

-

Mexico

Ciudad Victoria

Wafer Capacity

265

-

265

Guadalupe

Fabrication

Fab Initiation

-

Mexico

Monterrey

Wafer Capacity

532

-

532

San Nicolas

Fabrication

Fab Initiation

-

Mexico

Monterrey

Wafer Capacity

-

-

Fabrication

Fab Initiation

-

North Macedonia

Skopje

Wafer Capacity

126

-

126

Plant A

Fabrication

Fab Initiation

-

China

Suzhou

Wafer Capacity

353

-

353

Plant B

Fabrication

Fab Initiation

-

China

Suzhou

Wafer Capacity

-

-

Fabrication

Fab Initiation

-

China

Xiamen

Wafer Capacity

432

-

432

-

Fabrication

Fab Initiation

-

Italy

Pontecchio

Wafer Capacity

226

-

226

-

Fabrication

Fab Initiation

-

Portugal

Evora

Wafer Capacity

233

-

233

TOKIN

Fabrication

Fab Initiation

-

Vietnam

Biên Hòa City

Wafer Capacity

174

-

174

TOKIN

Fabrication

Fab Initiation

-

Thailand

Hom Sin

Wafer Capacity

-

-

Fabrication

Fab Initiation

-

Thailand

Chachoengsao

Wafer Capacity

171

-

171

TOKIN

Fabrication

Fab Initiation

-

Japan

Sendai

Wafer Capacity

378

-

378

TOKIN

Fabrication

Fab Initiation

-

Japan

Toyama

Wafer Capacity

-

-

Fabrication

Fab Initiation

-

Japan

Nyuzen

Wafer Capacity

209

-

209

-

Fabrication

Fab Initiation

-

Japan

Shiroishi

Wafer Capacity

378

-

378

-

Fabrication

Fab Initiation

-

Finland

Suomussalmi

Wafer Capacity

56

-

56

-

Fabrication

Fab Initiation

-

Bulgaria

Kyustendil

Wafer Capacity

86

-

86

-

Fabrication

Fab Initiation

-

Sweden

Farjestaden

Wafer Capacity

28

-

28

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