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VMM15-05

IXYS Corporation

VMM15-05 by IXYS Corporation

Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 175 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 2; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) VMM15-05 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

2

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Trade Compliance

VMM15-05 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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