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IXTP10P15T

IXYS Corporation

IXTP10P15T by IXYS Corporation

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: .35 ohm; Transistor Element Material: SILICON;

Median Price

$3.930

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 258 parts In-Stock

1+ parts

$3.930

100+ parts

$2.180

1k+ parts

$1.670

10k+ parts

-

258

$3.930

$2.180

$1.670

-

DigiKey

USA . 51 parts In-Stock

1+ parts

$3.930

100+ parts

$2.002

1k+ parts

$1.675

10k+ parts

-

51

$3.930

$2.002

$1.675

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 30 parts In-Stock

1+ parts

$2.500

100+ parts

$1.860

1k+ parts

-

10k+ parts

-

30

$2.500

$1.860

-

-

Ozdisan Elektronik

Türkiye . 95 parts In-Stock

1+ parts

$3.171

100+ parts

-

1k+ parts

-

10k+ parts

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95

$3.171

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-

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NAC Semi

USA . 76 parts In-Stock

1+ parts

-

100+ parts

$5.140

1k+ parts

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10k+ parts

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76

-

$5.140

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 6,420 parts In-Stock

1+ parts

$24.245

100+ parts

-

1k+ parts

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10k+ parts

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6,420

$24.245

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-

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Perfect Parts

USA . 218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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218

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Authorized Procurement Solutions

USA . 95 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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95

-

-

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GreenTree Electronics

Israel . 95 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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95

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Technical Specifications

Power Field Effect Transistors (FET) IXTP10P15T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

200 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTP10P15T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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