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IXTN40P50P

IXYS Corporation

IXTN40P50P by IXYS Corporation

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;

Median Price

$36.560

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 115 parts In-Stock

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$27.370

100+ parts

$19.170

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Mouser Electronics

USA . 239 parts In-Stock

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$36.470

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DigiKey

USA . 41 parts In-Stock

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$36.560

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$24.195

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Newark

USA . 96 parts In-Stock

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$37.660

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$24.920

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Element14

Singapore . 115 parts In-Stock

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$52.860

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$39.200

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Distributors (In-Stock)

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Bristol Electronics

USA . 41 parts In-Stock

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$26.400

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$24.367

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Nova Conductors

Japan . 870 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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Dan-Mar Components

USA . 40 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 139 parts In-Stock

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$19.360

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Component Stockers USA

USA . 636 parts In-Stock

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$22.220

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$22.220

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636

$22.220

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$31.370

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$24.710

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Microchip USA

USA . 4,143 parts In-Stock

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$88.504

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Perfect Parts

USA . 27 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IXTN40P50P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

3500 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTN40P50P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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