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IXTA3N100D2

IXYS Corporation

IXTA3N100D2 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

$7.380

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 824 parts In-Stock

1+ parts

$7.180

100+ parts

$3.750

1k+ parts

$3.710

10k+ parts

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824

$7.180

$3.750

$3.710

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DigiKey

USA . 115 parts In-Stock

1+ parts

$7.580

100+ parts

$3.760

1k+ parts

$3.194

10k+ parts

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115

$7.580

$3.760

$3.194

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 300 parts In-Stock

1+ parts

$5.736

100+ parts

$5.456

1k+ parts

$5.217

10k+ parts

-

300

$5.736

$5.456

$5.217

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Chip Stock

USA . 7,650 parts In-Stock

1+ parts

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7,650

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Sensible Micro Corp

USA . 362 parts In-Stock

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362

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Nova Conductors

Japan . 50 parts In-Stock

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50

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J2 Sourcing AB

Sweden . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.965

100+ parts

$1.946

1k+ parts

$1.867

10k+ parts

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50

$1.965

$1.946

$1.867

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Ampacity Inc.

Singapore . 95 parts In-Stock

1+ parts

$3.630

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95

$3.630

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Continental Prestige Electronics

USA . 4 parts In-Stock

1+ parts

$4.830

100+ parts

$3.550

1k+ parts

$2.550

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4

$4.830

$3.550

$2.550

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Component Stockers USA

USA . 434 parts In-Stock

1+ parts

$99.990

100+ parts

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434

$99.990

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iodParts Technologies Inc.

India . 36,000 parts In-Stock

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36,000

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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Perfect Parts

USA . 185 parts In-Stock

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185

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Aranea Global

USA . 50 parts In-Stock

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50

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Technical Specifications

Power Field Effect Transistors (FET) IXTA3N100D2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

DRAIN

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTA3N100D2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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