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IXKR47N60C5

IXYS Corporation

IXKR47N60C5 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JESD-609 Code: e1; Operating Mode: ENHANCEMENT MODE;

Median Price

$23.470

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 70 parts In-Stock

1+ parts

$18.480

100+ parts

$15.410

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Verical

USA . 70 parts In-Stock

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$18.480

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$15.410

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70

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Chip1Stop

Japan . 1,050 parts In-Stock

1+ parts

$23.470

100+ parts

$16.610

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$15.590

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1,050

$23.470

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$15.590

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DigiKey

USA . 75 parts In-Stock

1+ parts

$23.910

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$17.361

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Mouser Electronics

USA . 47 parts In-Stock

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$28.780

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$21.030

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47

$28.780

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$21.030

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Distributors (In-Stock)

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Bristol Electronics

USA . 30 parts In-Stock

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$15.149

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TME

Poland . 13 parts In-Stock

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$23.900

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$17.110

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Dan-Mar Components

USA . 30 parts In-Stock

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J2 Sourcing AB

Sweden . 3 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 163 parts In-Stock

1+ parts

$24.100

100+ parts

$18.730

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Microchip USA

USA . 4,789 parts In-Stock

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$58.857

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4,789

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Andel Nordic

Denmark . 500 parts In-Stock

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$58.960

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$41.274

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$41.274

500

$58.960

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$41.274

$41.274

QUARKTWIN TECHNOLOGY LTD

USA . 18,036 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 284 parts In-Stock

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284

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Technical Specifications

Power Field Effect Transistors (FET) IXKR47N60C5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1950 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

47 A

Maximum Drain Current (ID):

47 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXKR47N60C5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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