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IXFR44N50Q3

IXYS Corporation

IXFR44N50Q3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSIP-T3; Terminal Form: THROUGH-HOLE;

Median Price

$25.330

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 23 parts In-Stock

1+ parts

$25.330

100+ parts

$16.253

1k+ parts

$15.261

10k+ parts

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23

$25.330

$16.253

$15.261

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 2,750 parts In-Stock

1+ parts

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2,750

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 27 parts In-Stock

1+ parts

$20.230

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27

$20.230

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Component Stockers USA

USA . 530 parts In-Stock

1+ parts

$22.900

100+ parts

$17.720

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530

$22.900

$17.720

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Microchip USA

USA . 9,472 parts In-Stock

1+ parts

$56.902

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9,472

$56.902

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Aranea Global

USA . 100 parts In-Stock

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100

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Perfect Parts

USA . 28 parts In-Stock

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28

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Technical Specifications

Power Field Effect Transistors (FET) IXFR44N50Q3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1500 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

25 A

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.154 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

130 A

Reference Standard:

UL RECOGNIZED

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXFR44N50Q3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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