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HUF76429D3

Intersil

HUF76429D3 by Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .029 ohm; Maximum Drain Current (Abs) (ID): 20 A;

Median Price

$0.851

Lifecycle Status

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8

In-Stock Inventory

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DigiKey

USA . 1,441 parts In-Stock

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$0.870

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Rochester

USA . 1,441 parts In-Stock

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$0.832

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$0.691

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$0.616

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$0.616

Farnell

UK . 1,441 parts In-Stock

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$0.574

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Verical

USA . 1,441 parts In-Stock

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$3.237

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Vyrian

USA . 4 parts In-Stock

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Digiode

USA . 657 parts In-Stock

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$0.649

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Bristol Electronics

USA . 194 parts In-Stock

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Atlantic Semiconductor

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Corphita

USA . 69 parts In-Stock

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$0.615

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Microchip USA

USA . 196 parts In-Stock

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$4.290

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A-Z Elektronik GmbH

Germany . 7,463 parts In-Stock

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Alle Elektronik GmbH

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Supply Digital

USA . 2,891 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) HUF76429D3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Intersil

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.029 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HUF76429D3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Intersil

Japanese semiconductor company Renesas acquired Intersil on February 24, 2017. Intersil Corporation (NASDAQ:ISIL), a wholly owned subsidiary of Renesas Electronics Corporation, is a leading provider of innovative power management and precision analog solutions. The company's products form the building blocks of increasingly intelligent, mobile and power hungry electronics enabling advances in power management to improve efficiency and extend battery life. With a deep portfolio of intellectual property and a rich history of design and process innovation, Intersil is the trusted partner to leading companies in some of the world's largest markets, including the industrial and infrastructure, mobile computing, automotive and aerospace.

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