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JANTXVR2N7464U5

International Rectifier

JANTXVR2N7464U5 by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 2.5 A;

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-

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Suppliers In-Stock

0

In-Stock Inventory

< 1k

JANTXVR2N7464U5 by International Rectifier
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Technical Specifications

Small Signal Field Effect Transistors (FET) JANTXVR2N7464U5 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

1.77 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-CQCC-N15

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

15

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL-19500/675B

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Transistor Element Material:

SILICON

Trade Compliance

JANTXVR2N7464U5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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