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JANTX2N6784U

International Rectifier

JANTX2N6784U by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Minimum DS Breakdown Voltage: 200 V; Operating Mode: ENHANCEMENT MODE;

Median Price

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USA . 273 parts In-Stock

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Modulus Dynamics

Lithuania . 6,156 parts In-Stock

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$1.332

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$1.276

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6,156

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$1.332

$1.276

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Component Stockers USA

USA . 291 parts In-Stock

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$99.990

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291

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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871

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Perfect Parts

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617

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Technical Specifications

Power Field Effect Transistors (FET) JANTX2N6784U attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

20 mJ

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

2.25 A

Maximum Drain Current (ID):

2.25 A

Maximum Drain-Source On Resistance:

1.725 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-CQCC-N15

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

15

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9 A

Qualification:

Not Qualified

Reference Standard:

MIL-19500/556

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N6784U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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