Loading...

IRFZ44VZSTRRPBF

International Rectifier

IRFZ44VZSTRRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 914 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

914

-

-

-

-

Vyrian

USA . 524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

524

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 3,904 parts In-Stock

1+ parts

$0.989

100+ parts

$0.949

1k+ parts

$0.910

10k+ parts

-

3,904

$0.989

$0.949

$0.910

-

Component Stockers USA

USA . 791 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

791

$99.990

-

-

-

Corphita

USA . 908 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

908

-

-

-

-

Microchip USA

USA . 153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

153

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) IRFZ44VZSTRRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

73 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

57 A

Maximum Drain Current (ID):

57 A

Maximum Drain-Source On Resistance:

.012 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

230 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFZ44VZSTRRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.