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IRFS4227TRRPBF

International Rectifier

IRFS4227TRRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

USA . 590 parts In-Stock

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590

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Vyrian

USA . 282 parts In-Stock

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282

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Modulus Dynamics

Lithuania . 10,924 parts In-Stock

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$1.475

100+ parts

$1.416

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$1.357

10k+ parts

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10,924

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$1.416

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A-Z Elektronik GmbH

Germany . 7,016 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,677 parts In-Stock

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4,677

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Corphita

USA . 705 parts In-Stock

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705

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Technical Specifications

Power Field Effect Transistors (FET) IRFS4227TRRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

140 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

62 A

Maximum Drain Current (ID):

62 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

260 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFS4227TRRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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