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IRFL31N20D

International Rectifier

IRFL31N20D by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) IRFL31N20D attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

420 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

31 A

Maximum Drain-Source On Resistance:

.082 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PSSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

124 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFL31N20D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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