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IRFH5010TR2PBF

International Rectifier

IRFH5010TR2PBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Pulsed Drain Current (IDM): 400 A; Moisture Sensitivity Level (MSL): 1;

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

France . 150 parts In-Stock

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Ashlea Components Ltd

UK . 17 parts In-Stock

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Modulus Dynamics

Lithuania . 22,270 parts In-Stock

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$0.968

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$0.929

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$0.891

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QUARKTWIN TECHNOLOGY LTD

USA . 20,367 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) IRFH5010TR2PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

227 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

13 A

Maximum Drain Current (ID):

13 A

Maximum Drain-Source On Resistance:

.009 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

400 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFH5010TR2PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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