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IRF7453TRPBF

International Rectifier

IRF7453TRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

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Contempo Components LLC

USA . 2,390 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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Microchip USA

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF7453TRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

200 mJ

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

17 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7453TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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