Loading...

PAT1220C4DBT

Integrated Device Technology

PAT1220C4DBT by Integrated Device Technology

FIXED ATTENUATOR; Maximum Voltage Standing Wave Ratio: 1.3; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; JESD-609 Code: e0;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Assy Fe

Spain . 2,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,905

-

-

-

-

Perfect Parts

USA . 95 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

95

-

-

-

-

Technical Specifications

RF/Microwave Attenuators PAT1220C4DBT attributes and parameters. Explore more RF/Microwave Attenuators devices from Integrated Device Technology

Specs

Additional Features:

LOW NOISE

Nominal Attenuation:

4 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e0

Maximum Operating Frequency:

10000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin/Lead (Sn/Pb)

Maximum Voltage Standing Wave Ratio:

1.3

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.