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TD175N16SOF

Infineon Technologies

TD175N16SOF by Infineon Technologies

TD175N16SOF by Infineon Technologies is a Silicon Controlled Rectifier with 1.8V Max On-state Voltage, 150mA Max DC Gate Trigger Current, and 5400A Non Repetitive Peak On-state Current. It is used in applications requiring high current handling capabilities such as industrial power supplies and motor control systems.

Median Price

$56.310

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 190 parts In-Stock

1+ parts

$56.310

100+ parts

-

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190

$56.310

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 369 parts In-Stock

1+ parts

$53.494

100+ parts

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369

$53.494

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Vyrian

USA . 748 parts In-Stock

1+ parts

$56.310

100+ parts

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748

$56.310

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 3,872 parts In-Stock

1+ parts

$2.175

100+ parts

$2.088

1k+ parts

$2.001

10k+ parts

-

3,872

$2.175

$2.088

$2.001

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Corphita

USA . 400 parts In-Stock

1+ parts

$50.679

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400

$50.679

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Lixinc

USA . 11,500 parts In-Stock

1+ parts

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11,500

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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200

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Overview

Unleash the power of cutting-edge technology with the TD175N16SOF by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Silicon Controlled Rectifiers that offer unmatched reliability and performance. Ideal for a wide range of applications, this SCR boasts a maximum on-state current of 175A and a non-repetitive peak on-state current of 5400A, making it perfect for demanding tasks. Experience the value and benefits of Infineon's advanced technology with the TD175N16SOF, providing you with the competitive edge you need to succeed.

Feature Benefit Bullets

Maximum On-state Voltage: 1.8 V

Low maximum on-state voltage helps in reducing power losses and improves efficiency.

Maximum DC Gate Trigger Current: 150 mA

With a high maximum DC gate trigger current, this SCR can be easily controlled and triggered.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and enhances the overall reliability of the product.

Non Repetitive Peak On-state Current: 5400 A

High non-repetitive peak on-state current allows for handling heavy loads or short duration power surges effectively.

Package Shape: RECTANGULAR

Rectangular package shape offers efficient space utilization and ease of mounting in various applications.

Maximum On-state Current: 175 A

The high maximum on-state current rating makes this SCR suitable for handling medium to high-power applications.

Quick Connects Description: G-GR

Quick connect terminals simplify installation and maintenance processes.

Maximum Leakage Current: 40 mA

Low maximum leakage current ensures minimal power wastage when the device is in the off-state.

Repetitive Peak Reverse Voltage: 1600 V

High repetitive peak reverse voltage capability makes this SCR suitable for use in high voltage applications.

No. of Terminals: 5

Having 5 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and heat dissipation capabilities.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Trigger Device Type: SCR

Being an SCR, this device offers precise control over switching operations in power electronics applications.

Nominal Circuit Commutated Turn-off Time: 175 us

Fast turn-off time ensures efficient operation and reduced switching losses.

Reference Standard: IEC-61140, IEC-747-6, UL RECOGNIZED

Compliance with international standards ensures quality, safety, and interoperability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TD175N16SOF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

175 us

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

150 mA

Maximum DC Gate Trigger Voltage:

2 V

Quick Connects Description:

G-GR

Screw Terminals Description:

A-K-AK

Maximum Holding Current:

400 mA

JESD-30 Code:

R-XUFM-X5

Maximum Leakage Current:

40 mA

Non Repetitive Peak On-state Current:

5400 A

No. of Elements:

2

No. of Terminals:

5

Maximum On-state Voltage:

1.8 V

Maximum On-state Current:

175 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

275 A

Reference Standard:

IEC-61140, IEC-747-6, UL RECOGNIZED

Repetitive Peak Off-state Voltage:

1600 V

Repetitive Peak Reverse Voltage:

1600 V

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TD175N16SOF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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