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IPC100N04S5L1R5ATMA1

Infineon Technologies

IPC100N04S5L1R5ATMA1 by Infineon Technologies

Infineon's IPC100N04S5L1R5ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 400A IDM, and 0.0021 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,193 parts In-Stock

1+ parts

$1.540

100+ parts

$0.894

1k+ parts

$0.620

10k+ parts

$0.546

4,193

$1.540

$0.894

$0.620

$0.546

Chip1Stop

Japan . 4,990 parts In-Stock

1+ parts

$2.180

100+ parts

-

1k+ parts

-

10k+ parts

-

4,990

$2.180

-

-

-

DigiKey

USA . 5,023 parts In-Stock

1+ parts

$2.410

100+ parts

$1.049

1k+ parts

$0.768

10k+ parts

$0.597

5,023

$2.410

$1.049

$0.768

$0.597

Rochester

USA . 44,684 parts In-Stock

1+ parts

-

100+ parts

$0.810

1k+ parts

$0.672

10k+ parts

$0.600

44,684

-

$0.810

$0.672

$0.600

Verical

USA . 38,019 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.841

10k+ parts

$0.749

38,019

-

-

$0.841

$0.749

RS (Exports)

UK . 20,000 parts In-Stock

1+ parts

-

100+ parts

$1.493

1k+ parts

$1.379

10k+ parts

-

20,000

-

$1.493

$1.379

-

Element14

Singapore . 4,148 parts In-Stock

1+ parts

-

100+ parts

$1.780

1k+ parts

$1.300

10k+ parts

$1.120

4,148

-

$1.780

$1.300

$1.120

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 924 parts In-Stock

1+ parts

$0.630

100+ parts

-

1k+ parts

-

10k+ parts

-

924

$0.630

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$1.195

100+ parts

-

1k+ parts

-

10k+ parts

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750

$1.195

-

-

-

Vyrian

USA . 16,333 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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16,333

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Chip Stock

USA . 9,647 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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9,647

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 31,315 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

-

31,315

$0.426

-

-

-

Semicontronic

India . 16,243 parts In-Stock

1+ parts

$0.560

100+ parts

$0.546

1k+ parts

$0.543

10k+ parts

-

16,243

$0.560

$0.546

$0.543

-

Ampacity Inc.

Singapore . 16,079 parts In-Stock

1+ parts

$0.560

100+ parts

-

1k+ parts

-

10k+ parts

-

16,079

$0.560

-

-

-

Corphita

USA . 5 parts In-Stock

1+ parts

$0.597

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$0.597

-

-

-

Modulus Dynamics

Lithuania . 19,338 parts In-Stock

1+ parts

$1.060

100+ parts

$1.018

1k+ parts

$0.975

10k+ parts

-

19,338

$1.060

$1.018

$0.975

-

Corohmni

South Africa . 796 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

-

10k+ parts

-

796

$1.060

-

-

-

Advanced Electronics

New Zealand . 47 parts In-Stock

1+ parts

$1.168

100+ parts

$1.168

1k+ parts

$1.168

10k+ parts

-

47

$1.168

$1.168

$1.168

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Argo Parts USA

USA . 2,663 parts In-Stock

1+ parts

$1.195

100+ parts

-

1k+ parts

-

10k+ parts

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2,663

$1.195

-

-

-

Continental Prestige Electronics

USA . 9,605 parts In-Stock

1+ parts

$1.980

100+ parts

$1.240

1k+ parts

$0.851

10k+ parts

-

9,605

$1.980

$1.240

$0.851

-

RC Electronics

USA . 42,324 parts In-Stock

1+ parts

-

100+ parts

$1.030

1k+ parts

$0.940

10k+ parts

$0.910

42,324

-

$1.030

$0.940

$0.910

GreenTree Electronics

Israel . 24,431 parts In-Stock

1+ parts

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100+ parts

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24,431

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Perfect Parts

USA . 22,400 parts In-Stock

1+ parts

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22,400

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Allen Electronics Distributors

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.792

10k+ parts

$0.867

20,000

-

-

$0.792

$0.867

QUARKTWIN TECHNOLOGY LTD

USA . 18,068 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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18,068

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-

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Microchip USA

USA . 10,988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,988

-

-

-

-

Overview

When it comes to high-quality Power Field Effect Transistors, look no further than the IPC100N04S5L1R5ATMA1 by Infineon Technologies. With a reputation for excellence in semiconductor technology, Infineon delivers top-of-the-line products like this N-CHANNEL FET with a built-in diode. Ideal for a variety of applications, this transistor offers enhanced performance and reliability. Experience the value and benefits of Infineon's cutting-edge technology with the IPC100N04S5L1R5ATMA1, providing customers with efficient power management solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

Offers efficient conduction and high performance for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Surface Mount: YES

Enables easy and secure mounting onto PCBs, enhancing the overall assembly process.

Minimum DS Breakdown Voltage: 40 V

Provides reliable protection against voltage surges and ensures safe operation.

Package Shape: RECTANGULAR

Optimizes space utilization and facilitates efficient placement within electronic systems.

Maximum Pulsed Drain Current (IDM): 400 A

Supports high current applications and allows for robust performance under load.

Avalanche Energy Rating (EAS): 220 mJ

Indicates the ability to withstand energy spikes, enhancing the product's durability.

No. of Terminals: 8

Provides multiple connection points for interfacing with external circuits, offering flexibility in application.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high switching speeds and low power consumption, contributing to the product's efficiency.

Minimum Operating Temperature: -55 °C

Ensures reliable performance even in extreme temperature environments.

Maximum Drain Current (ID): 100 A

Supports high current flow, making it suitable for power-intensive applications.

Maximum Drain-Source On Resistance: 0.0021 ohm

Provides low resistance for efficient conduction, minimizing power loss and heat generation.

Terminal Position: DUAL

Facilitates easy and flexible connections with external components, improving overall circuit design.

Case Connection: DRAIN

Optimizes the flow of current in the circuit and improves thermal management.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, ensuring compatibility with automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) IPC100N04S5L1R5ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

220 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

100 A

Maximum Drain-Source On Resistance:

.0021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

400 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

IPC100N04S5L1R5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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