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IDW40G65C5BXKSA2

Infineon Technologies

IDW40G65C5BXKSA2 by Infineon Technologies

IDW40G65C5BXKSA2 by Infineon is a Schottky rectifier diode with 650V peak reverse voltage and 87A forward current. It has a common cathode configuration, max power dissipation of 112W, and operates b/w -55°C to 175°C. Ideal for high-efficiency applications requiring a through-hole terminal form.

Median Price

$13.200

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3 parts In-Stock

1+ parts

$11.300

100+ parts

$6.380

1k+ parts

$6.250

10k+ parts

-

3

$11.300

$6.380

$6.250

-

Chip1Stop

Japan . 222 parts In-Stock

1+ parts

$13.200

100+ parts

$8.030

1k+ parts

$8.010

10k+ parts

-

222

$13.200

$8.030

$8.010

-

DigiKey

USA . 240 parts In-Stock

1+ parts

$13.290

100+ parts

$8.054

1k+ parts

$6.669

10k+ parts

-

240

$13.290

$8.054

$6.669

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Newark

USA . 3 parts In-Stock

1+ parts

$13.540

100+ parts

$7.970

1k+ parts

-

10k+ parts

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3

$13.540

$7.970

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-

Element14

Singapore . 207 parts In-Stock

1+ parts

$23.340

100+ parts

$17.660

1k+ parts

$16.630

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207

$23.340

$17.660

$16.630

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Verical

USA . 41,280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.219

10k+ parts

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41,280

-

-

$10.219

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EBV Elektronik

Germany . 240 parts In-Stock

1+ parts

-

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-

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240

-

-

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RS (Exports)

UK . 226 parts In-Stock

1+ parts

-

100+ parts

$12.773

1k+ parts

-

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226

-

$12.773

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 329 parts In-Stock

1+ parts

$12.806

100+ parts

-

1k+ parts

-

10k+ parts

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329

$12.806

-

-

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Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$14.430

100+ parts

-

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-

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54

$14.430

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Vyrian

USA . 2,157 parts In-Stock

1+ parts

-

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2,157

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NAC Semi

USA . 240 parts In-Stock

1+ parts

-

100+ parts

-

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$18.600

10k+ parts

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240

-

-

$18.600

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Bristol Electronics

USA . 136 parts In-Stock

1+ parts

-

100+ parts

-

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136

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,700 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

-

10k+ parts

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4,700

$0.020

-

-

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Ampacity Inc.

Singapore . 173 parts In-Stock

1+ parts

$7.650

100+ parts

-

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-

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173

$7.650

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-

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Semicontronic

India . 127 parts In-Stock

1+ parts

$7.650

100+ parts

$7.459

1k+ parts

$7.420

10k+ parts

-

127

$7.650

$7.459

$7.420

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Corphita

USA . 3 parts In-Stock

1+ parts

$12.132

100+ parts

-

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-

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3

$12.132

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-

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Modulus Dynamics

Lithuania . 1,450 parts In-Stock

1+ parts

$13.712

100+ parts

$13.164

1k+ parts

$12.615

10k+ parts

-

1,450

$13.712

$13.164

$12.615

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Corohmni

South Africa . 99 parts In-Stock

1+ parts

$13.712

100+ parts

-

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99

$13.712

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Netroflash

USA . 500 parts In-Stock

1+ parts

$14.430

100+ parts

$14.141

1k+ parts

-

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500

$14.430

$14.141

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Continental Prestige Electronics

USA . 340 parts In-Stock

1+ parts

$14.880

100+ parts

$11.430

1k+ parts

-

10k+ parts

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340

$14.880

$11.430

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Component Stockers USA

USA . 1,047 parts In-Stock

1+ parts

$15.870

100+ parts

$12.370

1k+ parts

$12.440

10k+ parts

-

1,047

$15.870

$12.370

$12.440

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Microchip USA

USA . 9,575 parts In-Stock

1+ parts

$55.804

100+ parts

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9,575

$55.804

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Argo Parts USA

USA . 49 parts In-Stock

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49

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Overview

Discover a world of efficiency with the IDW40G65C5BXKSA2 by Infineon Technologies. This high-quality rectifier diode offers superior performance and reliability for a wide range of applications. With a maximum operating temperature of 175°C and a maximum repetitive peak reverse voltage of 650V, this diode is designed to deliver exceptional power dissipation and durability. Whether you're improving power supply efficiency or enhancing electronic circuits, the IDW40G65C5BXKSA2 is your go-to solution for optimizing performance and achieving long-lasting results. Experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient and effective power distribution in the circuit.

Maximum Reverse Current: 210 uA

With a low maximum reverse current, this diode ensures minimal power loss and enhances overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into various electronic devices or systems.

No. of Terminals: 3

The 3 terminals provide flexibility in circuit design and allow for versatile connections.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers stability and ease of installation in a variety of applications.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power optimization is crucial.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat and perform reliably in demanding conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode remains functional even in cold environments.

Terminal Finish: TIN

The tin terminal finish enhances conductivity and provides corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of connection errors.

Case Connection: CATHODE

The cathode case connection ensures proper polarity and simplifies circuit design.

Maximum Power Dissipation: 112 W

With a high maximum power dissipation, this diode can handle significant power levels without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC).

Maximum Forward Voltage (VF): 1.7 V

The low maximum forward voltage drop minimizes energy loss and improves efficiency in the circuit.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, making it suitable for high-frequency applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy soldering and secure connections in circuit boards.

No. of Elements: 2

With 2 diode elements, this product provides redundancy and enhances overall reliability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 650 V

The high maximum repetitive peak reverse voltage ensures protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 87 A

With a high maximum non-repetitive peak forward current, this diode can handle short-duration high current surges.

Diode Element Material: SILICON CARBIDE

The silicon carbide diode element material offers high temperature tolerance and low switching losses for efficient operation.

Technical Specifications

Diodes & Rectifiers IDW40G65C5BXKSA2 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

87 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

112 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

210 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

IDW40G65C5BXKSA2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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