Loading...

IDW40G65C5BXKSA1

Infineon Technologies

IDW40G65C5BXKSA1 by Infineon Technologies

IDW40G65C5BXKSA1 by Infineon Technologies is a Schottky rectifier diode with a max repetitive peak reverse voltage of 650V. It has a common cathode configuration and is designed for efficiency applications. With a max power dissipation of 112W, it operates in temperatures ranging from -55°C to 175°C.

Median Price

$14.257

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$14.257

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$14.257

-

-

-

Vyrian

USA . 8,247 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,247

-

-

-

-

Digiode

USA . 950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

950

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,784 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

2,784

$0.040

-

-

-

Semicontronic

India . 909 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

10k+ parts

-

909

$1.010

$0.985

$0.980

-

Ampacity Inc.

Singapore . 1,377 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,377

$2.010

-

-

-

AZTECH Wire

Italy . 668 parts In-Stock

1+ parts

$13.605

100+ parts

-

1k+ parts

-

10k+ parts

-

668

$13.605

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$13.972

100+ parts

-

1k+ parts

$13.413

10k+ parts

-

500

$13.972

-

$13.413

-

Modulus Dynamics

Lithuania . 18,584 parts In-Stock

1+ parts

$14.257

100+ parts

$13.687

1k+ parts

$13.116

10k+ parts

-

18,584

$14.257

$13.687

$13.116

-

Corohmni

South Africa . 27 parts In-Stock

1+ parts

$14.257

100+ parts

-

1k+ parts

-

10k+ parts

-

27

$14.257

-

-

-

Continental Prestige Electronics

USA . 4,154 parts In-Stock

1+ parts

$14.257

100+ parts

-

1k+ parts

-

10k+ parts

$13.972

4,154

$14.257

-

-

$13.972

Microchip USA

USA . 2,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,613

-

-

-

-

Argo Parts USA

USA . 1,251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,251

-

-

-

-

Corphita

USA . 297 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

297

-

-

-

-

Overview

Experience unmatched efficiency and performance with the IDW40G65C5BXKSA1 by Infineon Technologies. As a leader in diodes and rectifiers, Infineon Technologies brings you a product that stands out in quality and reliability. This rectifier diode is designed to deliver maximum power dissipation of 112 W, making it perfect for high-demand applications. With a maximum repetitive peak reverse voltage of 650 V and a Schottky technology, this diode offers superior performance and durability. Whether you're in the automotive industry or working with renewable energy systems, the IDW40G65C5BXKSA1 guarantees optimized efficiency and long-lasting results. Upgrade your projects today and experience the advantages that only Infineon Technologies can offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's use of plastic/epoxy material ensures durability and resilience, making it a reliable choice for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and is suitable for use in rectifier circuits.

Maximum Reverse Current: 210 uA

With a low maximum reverse current, this diode ensures minimal power loss and improved efficiency in reverse-biased applications.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration and space-saving capabilities, making it convenient for installations with limited space.

No. of Terminals: 3

With three terminals, this diode provides enhanced connectivity options, enabling versatile usage in various circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure and stable mounting, ensuring reliable operation even in challenging working environments.

Application: EFFICIENCY

This diode is specifically designed for efficiency-driven applications, providing optimal power conversion and reducing energy waste.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh conditions, making it suitable for demanding industrial environments.

Minimum Operating Temperature: -55 °C

The wide temperature range allows this diode to function reliably even in extreme cold environments, expanding its usability across various applications.

Terminal Finish: TIN

The use of tin terminal finish provides excellent conductivity and corrosion resistance, ensuring stable electrical connections and long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring tasks, making this diode an efficient choice for quick and hassle-free setups.

Case Connection: CATHODE

The case connection at the cathode offers easy circuit integration and ensures proper grounding, enhancing safety and stability.

Maximum Power Dissipation: 112 W

With a high maximum power dissipation, this diode can handle significant power levels, making it suitable for high-intensity applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) into direct current (DC), making it a reliable choice for power supply applications.

Maximum Forward Voltage (VF): 1.7 V

The low maximum forward voltage ensures minimal voltage drop across the diode, enhancing efficiency and performance in forward-biased applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speed and reduced power losses, making it ideal for high-frequency and low-voltage applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows easy and secure PCB mounting, enhancing overall durability and stability in various electronic circuits.

No. of Elements: 2

With two diode elements in a single package, this product provides cost-effective and space-saving solutions for multi-element circuit designs.

Maximum Repetitive Peak Reverse Voltage: 650 V

The high maximum repetitive peak reverse voltage enables this diode to handle substantial reverse voltage stresses, making it suitable for high-power applications.

No. of Phases: 1

This diode operates with a single phase, allowing for simplified circuit design and compatibility with single-phase power systems.

Maximum Non Repetitive Peak Forward Current: 87 A

With a high maximum non-repetitive peak forward current, this diode can handle short-term current surges, making it suitable for applications with occasional high loads.

Diode Element Material: SILICON CARBIDE

The use of silicon carbide as the diode element material offers excellent thermal conductivity, high-temperature capability, and reduced switching losses, making it an ideal choice for high-power and high-frequency applications.

Technical Specifications

Diodes & Rectifiers IDW40G65C5BXKSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

87 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

112 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

210 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

IDW40G65C5BXKSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 11