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IDW32G65C5BXKSA1

Infineon Technologies

IDW32G65C5BXKSA1 by Infineon Technologies

IDW32G65C5BXKSA1 by Infineon Technologies is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 650V. It has a max power dissipation of 188W and is designed for high-efficiency applications. Operating temperature ranges from -55°C to 175°C making it suitable for various industrial uses.

Median Price

$9.080

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5 parts In-Stock

1+ parts

-

100+ parts

$9.080

1k+ parts

$8.130

10k+ parts

$7.650

5

-

$9.080

$8.130

$7.650

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 7 parts In-Stock

1+ parts

$9.624

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-

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7

$9.624

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$11.422

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300

$11.422

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Vyrian

USA . 8,717 parts In-Stock

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8,717

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 897 parts In-Stock

1+ parts

$0.123

100+ parts

-

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897

$0.123

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Ampacity Inc.

Singapore . 5 parts In-Stock

1+ parts

$8.610

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5

$8.610

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Semicontronic

India . 5 parts In-Stock

1+ parts

$8.610

100+ parts

$8.395

1k+ parts

$8.352

10k+ parts

-

5

$8.610

$8.395

$8.352

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Corphita

USA . 780 parts In-Stock

1+ parts

$9.117

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780

$9.117

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$11.193

100+ parts

-

1k+ parts

$10.746

10k+ parts

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1,000

$11.193

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$10.746

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AZTECH Wire

Italy . 212 parts In-Stock

1+ parts

$11.313

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212

$11.313

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Continental Prestige Electronics

USA . 5,306 parts In-Stock

1+ parts

$11.422

100+ parts

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$11.193

5,306

$11.422

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$11.193

Modulus Dynamics

Lithuania . 23,092 parts In-Stock

1+ parts

$11.422

100+ parts

$10.965

1k+ parts

$10.508

10k+ parts

-

23,092

$11.422

$10.965

$10.508

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Corohmni

South Africa . 92 parts In-Stock

1+ parts

$11.422

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92

$11.422

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$11.650

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$11.650

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$11.650

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150

$11.650

$11.650

$11.650

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Component Stockers USA

USA . 505 parts In-Stock

1+ parts

$99.990

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505

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,874 parts In-Stock

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Microchip USA

USA . 3,902 parts In-Stock

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Argo Parts USA

USA . 1,720 parts In-Stock

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1,720

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Overview

Unlock new levels of efficiency and performance with the IDW32G65C5BXKSA1 from Infineon Technologies. This high-quality rectifier diode, featuring a Schottky technology and a maximum repetitive peak reverse voltage of 650V, is designed to optimize power management in various applications. With a maximum power dissipation of 188W and a common cathode configuration, this product ensures reliable operation even in extreme temperatures. Trust in Infineon's expertise and elevate your efficiency with the IDW32G65C5BXKSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Current: 200 uA

Low reverse current helps in minimizing power loss and increasing efficiency.

Maximum Operating Temperature: 175 °C

Can operate in high temperature environments without issues, increasing versatility.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower voltage drops compared to standard diodes.

Maximum Power Dissipation: 188 W

Can handle high power levels without overheating, suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers IDW32G65C5BXKSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

74 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

188 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

IDW32G65C5BXKSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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