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IDP15E65D1

Infineon Technologies

IDP15E65D1 by Infineon Technologies

IDP15E65D1 by Infineon Technologies is a single rectifier diode with a max reverse recovery time of 0.114 us and max output current of 30 A. It is designed for ultra fast recovery applications, with a max repetitive peak reverse voltage of 650 V. The diode operates in temperatures ranging from -40 to 175 °C and has a max power dissipation of 92 W.

Median Price

$2.980

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 696 parts In-Stock

1+ parts

$1.790

100+ parts

$0.755

1k+ parts

$0.541

10k+ parts

$0.492

696

$1.790

$0.755

$0.541

$0.492

Chip1Stop

Japan . 4 parts In-Stock

1+ parts

$4.170

100+ parts

-

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-

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4

$4.170

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 475 parts In-Stock

1+ parts

$1.444

100+ parts

-

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475

$1.444

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Vyrian

USA . 119 parts In-Stock

1+ parts

$1.520

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-

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119

$1.520

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Forefront Electronics and Design

USA . 24 parts In-Stock

1+ parts

$6.130

100+ parts

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24

$6.130

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 5,519 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.034

10k+ parts

-

5,519

$0.037

$0.036

$0.034

-

Corphita

USA . 766 parts In-Stock

1+ parts

$1.368

100+ parts

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766

$1.368

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Microchip USA

USA . 1,420 parts In-Stock

1+ parts

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1,420

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Perfect Parts

USA . 112 parts In-Stock

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112

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Experience the superior performance and reliability of the IDP15E65D1 by Infineon Technologies, a leading manufacturer in the diodes & rectifiers category. This ultra-fast recovery diode offers unmatched quality and efficiency, making it ideal for a wide range of applications. From power supplies to motor drives, this product delivers exceptional value with its high power dissipation capabilities and low reverse recovery time. Trust Infineon Technologies to provide the innovative solutions you need for your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode lightweight and durable, making it a suitable choice for various applications.

Maximum Reverse Recovery Time: 0.114 us

The ultra-fast maximum reverse recovery time ensures efficient operation of the diode, making it ideal for high-speed applications.

Maximum Reverse Current: 40 uA

The low maximum reverse current helps in minimizing power losses and improving overall efficiency of the diode.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy installation and secure mounting of the diode, making it convenient for use in different systems.

Maximum Power Dissipation: 92 W

The high maximum power dissipation capability allows the diode to handle large amounts of power without getting damaged, making it reliable for various applications.

Technical Specifications

Diodes & Rectifiers IDP15E65D1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE, SOFT FACTOR IS 1

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

92 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Maximum Reverse Recovery Time:

.114 us

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

IDP15E65D1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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