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IDK08G65C5XTMA1

Infineon Technologies

IDK08G65C5XTMA1 by Infineon Technologies

IDK08G65C5XTMA1 by Infineon is a Schottky rectifier diode with 650V peak reverse voltage and 1.8V forward voltage, suitable for efficiency applications. It has a max power dissipation of 76W, operates b/w -55 to 175°C, and features a Gull Wing terminal form for surface mount assembly.

Median Price

$2.118

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 702 parts In-Stock

1+ parts

-

100+ parts

$2.000

1k+ parts

$1.790

10k+ parts

$1.690

702

-

$2.000

$1.790

$1.690

Verical

USA . 702 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.237

10k+ parts

$2.112

702

-

-

$2.237

$2.112

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 51 parts In-Stock

1+ parts

$2.013

100+ parts

-

1k+ parts

-

10k+ parts

-

51

$2.013

-

-

-

Digiode

USA . 551 parts In-Stock

1+ parts

$2.128

100+ parts

-

1k+ parts

-

10k+ parts

-

551

$2.128

-

-

-

Vyrian

USA . 4,186 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,186

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 34,337 parts In-Stock

1+ parts

$0.091

100+ parts

$0.087

1k+ parts

$0.084

10k+ parts

-

34,337

$0.091

$0.087

$0.084

-

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.116

100+ parts

$0.106

1k+ parts

$0.095

10k+ parts

-

350

$0.116

$0.106

$0.095

-

Corohmni

South Africa . 181 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

-

10k+ parts

-

181

$0.148

-

-

-

Aztec Data Supply Inc.

USA . 4,196 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

-

10k+ parts

-

4,196

$0.150

-

-

-

Semicontronic

India . 487 parts In-Stock

1+ parts

$1.900

100+ parts

$1.852

1k+ parts

$1.843

10k+ parts

-

487

$1.900

$1.852

$1.843

-

Ampacity Inc.

Singapore . 275 parts In-Stock

1+ parts

$1.900

100+ parts

-

1k+ parts

-

10k+ parts

-

275

$1.900

-

-

-

Continental Prestige Electronics

USA . 3,845 parts In-Stock

1+ parts

$2.013

100+ parts

-

1k+ parts

-

10k+ parts

$1.972

3,845

$2.013

-

-

$1.972

Argo Parts USA

USA . 3,762 parts In-Stock

1+ parts

$2.013

100+ parts

-

1k+ parts

-

10k+ parts

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3,762

$2.013

-

-

-

Corphita

USA . 901 parts In-Stock

1+ parts

$2.016

100+ parts

-

1k+ parts

-

10k+ parts

-

901

$2.016

-

-

-

Authorized Procurement Solutions

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,500

-

-

-

-

Robosynatics

Brazil . 300 parts In-Stock

1+ parts

-

100+ parts

$3.341

1k+ parts

$3.341

10k+ parts

$3.341

300

-

$3.341

$3.341

$3.341

Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$3.341

1k+ parts

$3.341

10k+ parts

$3.341

300

-

$3.341

$3.341

$3.341

Overview

Unlock the power of efficiency with the IDK08G65C5XTMA1 by Infineon Technologies. This high-quality rectifier diode, made with cutting-edge silicon carbide technology, offers superior performance and reliability. Perfect for a wide range of applications, this small outline package is designed for easy surface mount installation. With a maximum operating temperature of 175°C and a low forward voltage of 1.8V, this diode provides exceptional power dissipation capabilities. Experience the benefits of Infineon's expertise and innovation with the IDK08G65C5XTMA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable makes this diode easily integrable into modern circuit designs and saves space on the PCB.

Maximum Reverse Current: 1400 uA

The low maximum reverse current ensures efficient performance and helps prevent power losses in the circuit.

Maximum Power Dissipation: 76 W

With a high maximum power dissipation, this diode can handle large amounts of power without overheating or failing.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it ideal for power supply applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard silicon diodes, resulting in higher efficiency and better performance.

Maximum Repetitive Peak Reverse Voltage: 650 V

The high maximum repetitive peak reverse voltage makes this diode suitable for high voltage applications, ensuring reliable operation under challenging conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes offer high temperature and high-frequency capabilities, making them ideal for demanding applications where standard silicon diodes may not perform well.

Technical Specifications

Diodes & Rectifiers IDK08G65C5XTMA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

76 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

1400 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

IDK08G65C5XTMA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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