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IDC15D120T6MX1SA2

Infineon Technologies

IDC15D120T6MX1SA2 by Infineon Technologies

IDC15D120T6MX1SA2 by Infineon is a single rectifier diode with 1200V peak reverse voltage and 25A output current. It operates b/w -40°C to 175°C, making it suitable for fast soft recovery applications in surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,172 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Digiode

USA . 18 parts In-Stock

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Semicontronic

India . 1,426 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 287 parts In-Stock

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$0.040

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.097

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Corohmni

South Africa . 33 parts In-Stock

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$0.117

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Modulus Dynamics

Lithuania . 399 parts In-Stock

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$0.185

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$0.178

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Ampacity Inc.

Singapore . 905 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 499 parts In-Stock

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$17.473

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Continental Prestige Electronics

USA . 2,616 parts In-Stock

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Argo Parts USA

USA . 969 parts In-Stock

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Microchip USA

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Corphita

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Discover the next level of performance and reliability with the IDC15D120T6MX1SA2 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality diodes and rectifiers that are perfect for applications requiring fast soft recovery. With a maximum output current of 25A and a maximum repetitive peak reverse voltage of 1200V, this product ensures optimal efficiency and durability. Say goodbye to downtime and hello to seamless operation with the IDC15D120T6MX1SA2.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the setup and installation process, making it easier to use.

Surface Mount: YES

Surface mount capability reduces the need for additional hardware and allows for compact and space-saving designs.

Package Shape: RECTANGULAR

Rectangular package shape provides stability and ease of mounting on circuit boards.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in design and allows for customization according to specific requirements.

Application: FAST SOFT RECOVERY

Fast soft recovery diodes are ideal for high-frequency applications where switching speed is critical.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for usage in extreme cold environments.

Terminal Position: UPPER

Upper terminal position provides convenient access for connecting wires or other components.

Diode Type: RECTIFIER DIODE

Rectifier diodes are efficient in converting AC to DC, making them suitable for power supply applications.

Maximum Output Current: 25 A

High maximum output current capability allows for handling large currents without overheating or performance degradation.

Terminal Form: NO LEAD

No lead terminal form offers easy integration and soldering onto circuit boards without additional leads.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage ensures protection against voltage spikes and surges in the circuit.

Diode Element Material: SILICON

Silicon diode element material provides high conductivity and reliability, suitable for various power applications.

Technical Specifications

Diodes & Rectifiers IDC15D120T6MX1SA2 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

IDC15D120T6MX1SA2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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